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  0.15a Datasheet PDF File

For 0.15a Found Datasheets File :: 10375    Search Time::1.266ms    
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    2SJ340

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ340
OCR Text ...sions unit:mm 2093A [2SJ340] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 2.55...15A ID=-15A, VGS=-10V ID=-15A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specif...
Description Ultrahigh-Speed Switching Applications 超高速开关应

File Size 40.73K  /  4 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max --...15A, VGS = -10V Note3 I D = -15A, VGS = -4V Note3 I D = -15A, VDS = -10V Note3 VDS = -10V VGS = 0 f ...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text ...I DSS I GSS Min -30 20 -- -- -1.0 -- -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max --...15A, VGS = -10V Note3 I D = -15A, VGS = -4V Note3 I D = -15A, VDS = -10V Note3 VDS = -10V VGS = 0 f ...
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12...15A, VGS = 0 I F = -15A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...15A, VGS = -10V Note4 I D = -15A, VGS = -4V Note4 I D = -15A, VDS = -10V Note4 VDS = -10V VGS = 0 f ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...15A, VGS = -10V Note4 I D = -15A, VGS = -4V Note4 I D = -15A, VDS = -10V Note4 VDS = -10V VGS = 0 f ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...15A, VGS = 0 I F = -15A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ544

HITACHI[Hitachi Semiconductor]
Part No. 2SJ544
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...15A, VGS = -10V Note4 I D = -15A, VGS = -4V Note4 I D = -15A, VDS = -10V Note4 VDS = -10V VGS = 0 f ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.22K  /  9 Page

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    2SJ546

HITACHI[Hitachi Semiconductor]
Part No. 2SJ546
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...15A, VGS = 0 I F = -15A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...15A, VGS = 0 I F = -15A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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