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  1.5-2.7ghz Datasheet PDF File

For 1.5-2.7ghz Found Datasheets File :: 851    Search Time::1.141ms    
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    2SC5415

SANYO[Sanyo Semicon Device]
Part No. 2SC5415
OCR Text ... unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base ...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 45.72K  /  6 Page

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    TIM7785-16UL

TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-16UL
OCR Text ... TYP. MAX. mS 3600 V A V C/W -1.0 -5 -2.5 10.5 1.5 -4.0 14.0 1.8 Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIB...
Description MICROWAVE POWER GaAs FET

File Size 69.02K  /  4 Page

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    FMM5017VF

Fujitsu Component Limited.
Fujitsu Media Devices Limited
Part No. FMM5017VF
OCR Text ... designs that require less than 1 Watt and lower cost. Fujitsu's stringent Quality Assurance Program assures the highest reliability and con...5 GHz Test Conditions Min. 14.0 28.0 18.0 Limit Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 ...
Description GaAs MMIC
From old datasheet system

File Size 86.68K  /  4 Page

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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ...a driver or output stage in the 1.7 to 2.3GHz band. The output stage is partially matched for this device. ABSOLUTE MAXIMUM RATINGS (Ambi...5 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Frequency Range Output Power ...
Description From old datasheet system
GaAs MMIC

File Size 111.32K  /  4 Page

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    FMM5057VF

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. FMM5057VF
OCR Text 1-8.5GHz Power Amplifier MMIC FEATURES High Output Power: 34.0dBm(typ.) High Linear Gain: 26.0dB(typ.) Low VSWR Broad Band: 7.18.5GHz Imped...5 VDD=10V VGG=-5V f=7.1 to 8.5GHz 32.0 23.0 VDD=10V,VGG=-5V 34.0 26.0 2.4 2:1 2:1 1100 5.0 50 4.0 2....
Description 14 POS DUAL ROW SOCKET
7.1-8.5GHz Power Amplifier MMIC
From old datasheet system

File Size 296.99K  /  8 Page

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    FMM5061VF

Fuji Electric
Part No. FMM5061VF
OCR Text ... -40~+85 Limits Typ. Max. 13.3 *1 33 31*2 26 *2 24 21*1 *2 *1 ELECTRICAL CHARACTERISTICS (Case Temperature TC =25 o C) Item Frequency Ra...5~11.7GHz *2:f=11.7~13.3GHz Min. 9.5 *1 31 29*2 24 *2 22 *1 - 15 *3:f=10MHz , -42*3 -45*3 *1 *...
Description X-Band Power Amplifier MMIC

File Size 170.74K  /  14 Page

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...Noise Figure Noise Figure 2.00 1.75 Noise Figure (dB) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05dB High OIP3 = +35dBm at 2GHz Gain = 15dB, Low Gain Slope 50 I...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text ...he ordering information. PIN 1 HC44 OPTIONAL PIN 1 REFERENCE FEATURES s 2.8GHz Operating Frequency (IG GRADE) s Single 5V Supply...5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input ...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

File Size 168.71K  /  14 Page

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text ....5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80 dBm dB A % dBc A C f =10.7-11.7GHz add IM3 -42 VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Curre...
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 142.06K  /  5 Page

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    EC3H02B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H02B
OCR Text ...ons Features * Low noise : NF=1.0dB typ (f=1GHz). * High gain : S21e2=12dB typ (f=1GHz). * High cutoff frequency : fT=7GHz typ. * Ultrasma...5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta ...
Description VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications

File Size 37.44K  /  5 Page

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For 1.5-2.7ghz Found Datasheets File :: 851    Search Time::1.141ms    
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