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  100v 40a Datasheet PDF File

For 100v 40a Found Datasheets File :: 742    Search Time::1.938ms    
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    IRF5210L IRF5210S

IRF[International Rectifier]
Part No. IRF5210L IRF5210S
OCR Text ...escription l l D VDSS = -100v RDS(on) = 0.06 G ID = -40a S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...
Description Power MOSFET(Vdss=-100v/ Rds(on)=0.06ohm/ Id=-40a)
Power MOSFET(Vdss=-100v, Rds(on)=0.06ohm, Id=-40a)

File Size 182.97K  /  10 Page

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    IRF5210

IRF[International Rectifier]
Part No. IRF5210
OCR Text ...Avalanche Rated D VDSS = -100v RDS(on) = 0.06 G ID = -40a S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T...
Description -100v Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100v Rds(on)=0.06ohm Id=-40a)
Power MOSFET(Vdss=-100v, Rds(on)=0.06ohm, Id=-40a)
Power MOSFET(Vdss=-100v/ Rds(on)=0.06ohm/ Id=-40a)

File Size 121.40K  /  8 Page

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    IXTH50N20 IXTM50N20

IXYS[IXYS Corporation]
Part No. IXTH50N20 IXTM50N20
OCR Text ...racteristic Curve 14 12 VDS = 100v ID = 50A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 100 Limited by R DS(on) 100s ID - Amperes VGE - Volts 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 1ms 10 10ms 100...
Description MegaMOS FET
RES, 11K OHM, 1%, 1/10W, 100PPM CHIP, 0805
RES D, 0805, 113000.000 OHM, 1.00%, 1/10W

File Size 110.06K  /  4 Page

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    MAS110S

Dynex Semiconductor
Part No. MAS110S
OCR Text ...25C, IDRM = 50mA, VDSM = VDRM + 100v Fig.2 Single circuit For full description of part number see 'Ordering Information'. THYRISTOR...40a 10 1.0 1.0 10 100 Rate of rise of reverse current dIRR/dt - (A/s) 1000 Fig.7 Recover...
Description Fast Turn-off Asymmetric Thyristor/Diode Module

File Size 49.12K  /  9 Page

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    FQL40N50F

FAIRCHILD[Fairchild Semiconductor]
Part No. FQL40N50F
OCR Text ...d 12 10000 10 VDS = 100v VDS = 250V VDS = 400V VGS, Gate-Source Voltage [V] Ciss 8000 8 Capacitance [pF] Coss 6000 6 4000 Crss 2000 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 40 A ...
Description 500V N-Channel MOSFET

File Size 634.51K  /  8 Page

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    FQL40N50

FAIRCHILD[Fairchild Semiconductor]
Part No. FQL40N50
OCR Text ...d 12 10000 10 VDS = 100v VDS = 250V VDS = 400V VGS, Gate-Source Voltage [V] Ciss 8000 8 Capacitance [pF] Coss 6000 6 4000 Crss 2000 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 40 A ...
Description 500V N-Channel MOSFET

File Size 622.09K  /  8 Page

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    2SC4635LS

Sanyo Semicon Device
Part No. 2SC4635LS
OCR Text ... IC=1mA, RBE= IE=100A, IC=0 VCB=100v, f=1MHz Junction - case 1500 1500 5 1.9 8.3 Ratings min typ max 5 2 Unit V V V V V pF C / W 2.0 I...40a 35A Collector Current, IC -- mA 1.6 40 1.2 30A 25A 30 5mA 4mA 3mA 0.8 ...
Description NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/20mA High-Voltage Amplifier,High-Voltage Switching Applications

File Size 28.50K  /  3 Page

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    2SC4636LS

Sanyo Semicon Device
Part No. 2SC4636LS
OCR Text ... IC=100A, RBE= IE=10A, IC=0 VCB=100v, f=1MHz Junction - case 2000 1800 5 1.4 12.5 Ratings min typ max 5 2 Unit V V V V V pF C / W 200 IC -- VCE 10A 9A 7A 5 IC -- VCE 450A 400A 350A 50 0 A 8A 6A 5A Collector Current, IC...
Description NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications

File Size 30.51K  /  3 Page

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    FS40SM-5 FS40SBM-5

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
Part No. FS40SM-5 FS40SBM-5
OCR Text ... Tch = 25C ID = 40a VDS = 50V 100v 200V 8 TC=125C 40 12 20 4 10 0 0 40 80 120 160 200 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ...
Description HIGH-SPEED SWITCHING USE

File Size 46.81K  /  4 Page

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