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Mitsubishi Electric Corporation
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Part No. |
FS40SM-5
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OCR Text |
...t ch t stg 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain outline drawing dimensions in mm v gs = 0v v ds = 0v typical value symbol drain-source voltage gate-s... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
51.64K /
4 Page |
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Powerex Power Semiconductor... Mitsubishi Electric Corporation
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Part No. |
FK30SM-5
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OCR Text |
3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain v dss ................................................................................ 250v r ds (on) (max) ............................ |
Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE Power MOSFETs: FK Series, 250V Class
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File Size |
62.88K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
FK16SM-5
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OCR Text |
...atings unit 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain
feb.1999 v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss... |
Description |
Power MOSFETs: FK Series, 250V Class
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File Size |
64.40K /
5 Page |
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Hynix Semiconductor, Inc.
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Part No. |
HY5DV641622AT-5
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OCR Text |
... chan ged from +/-5ua to +/-2ua 3. revision 0.6 (dec. 01) 1) separated ?function desc ription? and ?timin g diagram? parts - these are available in web site (www.hynix.com) 2. revision 0.5 (nov. 01) 1) changed tck maximum v... |
Description |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
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File Size |
278.28K /
27 Page |
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it Online |
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Hynix Semiconductor, Inc.
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Part No. |
HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33
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OCR Text |
...target ac, dc spec. nov. 2002 0.3 changed tck_max. value of hy5dv281622dt-4/5/6 from 7.5ns to 7.0ns feb. 2003 0.4 changed vdd/vddq max range of hy5dv281622dt-33/36 aug. 2003 0.5 changed tras_max value from 120k to 100k in all frequency aug.... |
Description |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
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File Size |
289.31K /
31 Page |
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it Online |
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Vishay Intertechnology, Inc.
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Part No. |
RWM8X451.2OHM/-5 RWM8X456.8OHM/-5 RWM8X455.6OHM/-5 RWM8X454.7OHM/-5
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OCR Text |
... w 9.5 w 9.5 w 21 w 21 w 25.8 w 3 w 5 w 7 w 7 w 8 w 8 w 11 w 11 w 25 w 25 w 30 w 5.5 w 7 w 10 w 10 w 10 w 12 w 14 w 20 w 25 w 25 w 30 w 120 v 300 v 350 v 350 v 500 v 500 v 650 v 650 v 800 v 800 v 800 v 4.8 k ? ? 18.8 k ? 17.5 k ? ? 31 k ? ?... |
Description |
RESISTOR, WIRE WOUND, 11 W, 5 %, 75 ppm, 1.2 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, WIRE WOUND, 11 W, 5 %, 75 ppm, 6.8 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, WIRE WOUND, 11 W, 5 %, 75 ppm, 5.6 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, WIRE WOUND, 11 W, 5 %, 75 ppm, 4.7 ohm, THROUGH HOLE MOUNT AXIAL LEADED
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File Size |
112.47K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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