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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...( 31m) 1.70 38m( 28m) 1.90 57m( 42m) 1.95 31m( 23m) 2.20 31.1m( 23m) 1.85 Rated Current (A) *4 D.C.R.() : Max.(Typ.) 18m( 13m) 24m( 18m) Rated Current (A) *4 2.60 2.40 20.3m( 15m) 27.0m( 20m) 2.30 2.10 D.C.R.() : Max.(Typ.) 17.6m( 13m) Rate... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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Champion Microelectronic, Corp.
CHAMP[Champion Microelectronic Corp.]
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| Part No. |
CM3706IM25 CM3706 CM3706GIM25
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| OCR Text |
...1M ; VOUT =2.5V R1=316K ; R2= 1.42m ; VOUT =3.3V. Input Capacitor Selection The input capacitor reduces the surge current drawn from the input and switching noise from the device. The input capacitor impedance at the switching frequency sha... |
| Description |
1.5MHz, 600mA Synchronous Step-Down Regulator 1.5MHz的，600毫安同步降压稳压
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| File Size |
381.28K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP42AN15A0 FDB42AN15A0 FDP42AN15A0NL
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| OCR Text |
42m
Features
* r DS(ON) = 36m (Typ.), VGS = 10V, ID = 12A * Qg(tot) = 33nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Formerly developmental typ... |
| Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 35A, 0.042 ohms @ Vgs = 10 V, TO-263/D2PAK Package
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| File Size |
194.45K /
11 Page |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB6D0DN30QA
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| OCR Text |
...Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V
B1 B2 1 4 8 5 A
Super High Dense Cell Design High Power and Current Handing Capability
DIM A B1 B2 D G H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3... |
| Description |
Dual N-Ch Trench MOSFET 双N沟道MOSFET通道
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| File Size |
462.34K /
5 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
PI3039
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| OCR Text |
...lement spacing is approximately 42m. The size of each chip without the scribe lines is 8080 m by 360 m. Each sensor chip has 6 bonding pads. The pad symbols and functions are described in Table 1.
Page 1 of 10, PI3039, 12/2/02
SYMBOL ... |
| Description |
600DPI CIS Image Sensor Chip
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| File Size |
600.22K /
10 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN3400S23RG SPN3400
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| OCR Text |
...= 38m@VGS=10V 30V/4.6A,RDS(ON)= 42m@VGS=4.5V 30V/3.8A,RDS(ON)= 55m@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
PIN CONFIGURATION(... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
196.31K /
8 Page |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4426S8TG SPN4426 SPN4426S8RG
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| OCR Text |
...36m@VGS= 2.5V 20V/3.0A,RDS(ON)= 42m@VGS= 1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP - 8P package design APPLICATIONS Power Management in Note book Portable ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
228.28K /
8 Page |
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Price and Availability
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