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    MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D MT58V512V32D

MICRON[Micron Technology]
Part No. MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D MT58V512V32D
OCR Text 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURSTTM SRAM FEATURES * Fast clock and OE# access times * Single +3.3V 0.165Vor 2.5...BYTE WRITE control and GLOBAL WRITE * Three chip enables for simple depth expansion and address pipe...
Description 16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM

File Size 497.29K  /  34 Page

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    GS8161E18T-150

GSI TECHNOLOGY
Part No. GS8161E18T-150
OCR Text 512k x 32, 512k x 36 18mb sync burst srams 250 mhz ? 133 mhz 2.5 v or 3.3 v v dd 2.5 v or 3.3 v i/o 100-pin tqfp & 165-bump bga commercial t...byte write (bw ) and/or global write (gw ) operation ? internal self-timed write cycle ? automatic p...
Description 1M X 18 CACHE SRAM, 7.5 ns, PQFP100

File Size 600.42K  /  36 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1371D-133BGXCT
OCR Text 512k x 36/1m x 18) flow-through sram with nobl? architecture cy7c1371d cy7c1373d cypress semiconductor corporation ? 198 champion court ? ...byte write capability ? 3.3v/2.5v io power supply (v ddq ) ? fast clock-to-output times ? 6.5 ns (fo...
Description 512K X 36 ZBT SRAM, 6.5 ns, PBGA119

File Size 864.64K  /  29 Page

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    Integrated Device Technology, Inc.
Part No. IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133PFI IDT71V802S150PFI IDT71V67602S150PFI
OCR Text ...1 features u u u u u 256k x 36, 512k x 18 memory configurations u u u u u supports high system speed: C 166mhz 3.5ns clock access time C ...byte write enable ( bwe bwe bwe bwe bwe ), and byte writes ( bw bw bw bw bw x) u u u u u 3.3v core p...
Description 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线,单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100

File Size 980.97K  /  22 Page

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    Integrated Device Technology, Inc.
Part No. IDT71V67802150BQI IDT71V67802150BG IDT71V67602150PF IDT71V67602150BQ IDT71V67602166PFI IDT71V67802133BG IDT71V67802133BQ
OCR Text ...1 features u u u u u 256k x 36, 512k x 18 memory configurations u u u u u supports high system speed: C 166mhz 3.5ns clock access time C ...byte write enable ( bwe ), and byte writes ( bw x) u u u u u 3.3v core power supply u u u u u power ...
Description 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect

File Size 517.49K  /  23 Page

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    Cypress Semiconductor, Corp.
Part No. CYM8301BV33-10BGC CYM8301BV33-10BGI CYM8301BV33-12BGC CYM8301BV33-12BGI
OCR Text 512k x 24 static ram module cym8301bv33 cypress semiconductor corporation ? 3901 north first street  san jose  ca 95134  408-943-2600 doc...byte is separately controlled by the individual chip selects(ce0 ,ce1 ,ce2 ). ce0 controls i/o0 ? 7...
Description 512K X 24 MULTI DEVICE SRAM MODULE, 12 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
512K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
null : SRAM Modules

File Size 335.11K  /  9 Page

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    Sunplus
Part No. SPC500A1
OCR Text ...processor with 69 instructions, 512k-byte ROM for speech and melody data (Speech is compressed by a 4-bit ADPCM with approx. 120 sec speech duration @ 7KHz sampling rate) and 128-byte working SRAM. It includes two Timer/Counters, 23 Softwar...
Description 512KB SOUND CONTROLLER

File Size 235.85K  /  18 Page

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    GS8161E36BGT-200V

GSI Technology
Part No. GS8161E36BGT-200V
OCR Text 512k x 36, 512k x 36 18mb sync burst srams 250 mhz ? 150 mhz 1.8 v or 2.5 v v dd 1.8 v or 2.5 v i/o 100-pin tqfp & 165-bump bga commercial ...byte write ( bw ) and/or global write ( gw ) operation ? internal self-timed write cycle ? automatic...
Description 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

File Size 771.45K  /  35 Page

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