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  6-l-sc Datasheet PDF File

For 6-l-sc Found Datasheets File :: 25229    Search Time::7.078ms    
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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ...bol Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- ...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ....5 V -2 V -10 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 3 2SJ554 Drain to Source Saturation Voltage vs. Gate to ...l D =-50 A -1 -10 A 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) -20 A 0.02 0.01 -1 -3 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ... VGS = -4 V 20 -10 V 10 5 -1.6 -1.2 I D = -50 A -0.8 -0.4 -5 A 0 -4 -8 -12 Gate to Source Voltage -20 A -10 A -16 -20 V GS (V...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ...rce ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (V...L = -25.2 mH, IAR = -2.5 A RG = 25 W, Note 3: Repetitive rating: Pulse width limited by maximum chan...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ...S = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) * 2.5 V gate drive device. * Small package (CMPAK) Outline CMPAK ...l D = -50 mA -0.8 -100 mA -2.5 V -0.4 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ...ymbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 75 mH, IAR = -2.0 A, RG = 25 W Note 3: Repetitive rat...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ...V, ID = -1 mA VGS = -4 V, ID = -6 A VGS = -10 V, ID = -6 A VDS = -10 V, ID = -6 A 4.5 3/4 3/4 3/4 3/4 VOUT 3/4 50 9 RL = 6.25 W 3/4 Duty < 1...L = 1.84 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...V, ID = -9 A VDS = -10 V, ID = -6 A Min 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 85 63 15 2900 480 1000 25 45 25 Max 10 Unit mA mA V V mW S -100 3/4...L x I2 x c cB / 2 VDSS - VDD o e VDS RG = 25 W VDD = -50 V, L = 3.56 mH 5 2002-09-11 ...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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