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  8v 1a Datasheet PDF File

For 8v 1a Found Datasheets File :: 13091    Search Time::0.672ms    
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    Sanken
Part No. SI-5153S
OCR Text ...O (V) 14V 10 VO (V) 10 8v 5 8v 5 5 8v 0 0 1 2 3 4 5 0 0 1 2 3 4 5 0 0 1 ...1a IIH (mA) 10 0.4 IIL (A) 0 50 100 150 VO (V) 0.6 3 2 5 0.2 1 0 0...
Description Power Switch

File Size 27.20K  /  2 Page

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    AP2612GY-HF

Advanced Power Electronics Corp.
Part No. AP2612GY-HF
OCR Text 8v gate drive bv dss 30v simple drive requirement r ds(on) 35m surface mount device i d 6a rohs compliant description absolute maximu...1a - - 75 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transc...
Description Capable of 1.8v Gate Drive, Simple Drive Requirement

File Size 93.00K  /  4 Page

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    Alpha & Omega Semiconductor...
Part No. AON4701
OCR Text ...r ds(on) < 160m ? (v gs = -1.8v) schottky v ka (v) = 20v, i f = 1a, v f <0.5v@0.5a general description the aon4701 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to f...
Description P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 162.18K  /  5 Page

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    AP2613GY-HF

Advanced Power Electronics Corp.
Part No. AP2613GY-HF
OCR Text ...v, i d =-3a - 42 50 m v gs =-1.8v, i d =-1a - 60 75 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 -0.7 -1 v g fs forward transconductance v ds =-5v, i d =-4a - 15 - s i dss drain-source leakage current v ds =-16v, v gs =...
Description Fast Switching Characteristic, Lower Gate Charge

File Size 54.17K  /  4 Page

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    EN5310DC EN5310DC-T EN5310DI-T EN5310 EN5310DC-E EN5310DI

Enpirion, Inc.
Part No. EN5310DC EN5310DC-T EN5310DI-T EN5310 EN5310DC-E EN5310DI
OCR Text ...r common output voltages from 0.8v to 3.3V External resistor divider and OVP option for programming output voltages from 0.9V to 4.0V Output...1a VOUT TA= 0 to 70C Temperature VOUT Regulation TA= -40 to 85C VOUT Transient Response (IOUT = 0% t...
Description 1a Voltage Mode Synchronous Buck PWM DC-DC Converter

File Size 228.21K  /  10 Page

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    PJT7800

Pan Jit International Inc.
Part No. PJT7800
OCR Text ...15m ? ? r ds(on) , v gs @1.8v, i d @0.3a<400m ? ? advanced trench process technology ? specially designed for switch lo ad, pwm ...1a - 120 150 m ? v gs =2.5v, i d =0.7a - 160 215 v gs =1.8v, i d =0.3a - 260 400 zero gate volt...
Description 20V N-Channel Enhancement Mode MOSFET ?ESD Protected

File Size 295.04K  /  6 Page

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    VAISH[Vaishali Semiconductor]
Part No. VS3V125QX VS3V125 VS3V125Q
OCR Text 8v translation Hot Swapping Bus switching *= *= Clock gating Logic replacement General Description The VS3V125 contains a set of four hi...1a /1OE /2OE /3OE /4OE 1Y 2A 3A 4A QSOP NC /1OE 1a 1Y /2OE 2A 2Y GND 1 2 3 4 5 6 7 8 16 15...
Description 3.3V Quad Bus Switch with Individual Active Low Enables

File Size 61.55K  /  6 Page

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    PPJT7600 PJT7600-R1-00001 PJT7600-R2-00001

Pan Jit International Inc.
Part No. PPJT7600 PJT7600-R1-00001 PJT7600-R2-00001
OCR Text ...d = 0.7a - 160 215 v gs = 1.8v, i d = 0.3a - 280 400 zero gate voltage drain current i dss v ds = 20v, v gs =0v - 0.01 1 ua gate-...1a, v gs =4.5v (note 1,2) - 1.6 - nc gate-source charge q gs - 0.3 - gate-drain charge q g...
Description 20V Complementary Enhancement Mode MOSFET . ESD Protected

File Size 484.51K  /  9 Page

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    AO3413 AO341310

Alpha & Omega Semiconductors
Part No. AO3413 AO341310
OCR Text ...on) < 130m w (v gs = -1.8v) general description the ao3413 uses advanced trench technology to provide excellent r ds(on) , low gate...1a,v gs =0v v ds =-5v, i d =-3a v gs =-1.8v, i d =-1a r ds(on) static drain-source on-resistance for...
Description 20V P-Channel MOSFET

File Size 453.68K  /  5 Page

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