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				ZF Electronics Corporation CHERRY[Cherry Semiconductor Corporation]
Part No.	CS235 CS235GDW18 CS235GDWR18 CS235GN18
OCR Text	...cessing. Low average current is attained by pulsing the system once every 10 seconds for 20 milliseconds. Bias is applied to the signal processing circuitry for this time interval. During the second half of the pulse, the last 10 millisecon...
Description	System Photoelectric Smoke Detector
File Size	147.27K / 6 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	OP27AJ OP27GZ OP27EJ OP27AZ OP27CZ OP27 OP27FP OP27GJ OP27GP OP27EP OP27EZ OP27GS
OCR Text	...e performance levels previously attained only by discrete designs. Low-cost, high-volume production of OP27 is achieved by using an on-chip Zener zap-trimming network. This reliable and stable offset trimming scheme has proved its effective...
Description	Low-Noise / Precision Operational Amplifier Low-Noise, Precision Operational Amplifier Low-Noise Precision Operational Amplifier
File Size	360.36K / 16 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXD2301Q
OCR Text	...um conversion rate of 30MSPS is attained at a low power consumption by adopting a 2-step parallel system. Features * Resolution: 8 bits 1/2LSB (DL) * Maximum sampling frequency: 30MSPS * Low power consumption: 120mW (at 30MSPS typ.) (Includ...
Description	8-bit 30MSPS Video A/D Converter with Built-in Amplifier/Clamp
File Size	471.46K / 23 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MMFT2N02EL MMFT2N02EL_D ON2221
OCR Text	...VDS/dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s. 4 Motorola TMOS Power MOSFET Transistor Device Data MMFT2N02EL 15 V VGS 0 IFM 90% IS 10% ton IRM tfrr VDS(pk) VR VDS VdsL MAX. CSOA STRESS AREA 0.25 IRM dlS/dt trr...
Description	From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS
File Size	250.45K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	NM27C010 27C010
OCR Text	...0.10V. Note 5: TRI-STATE may be attained using OE or CE. Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 F ceramic capacitor be used on every device between VCC ...
Description	1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位（128K的8）高性能CMOS存储 1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
File Size	117.79K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NM27C020 NM27C020QE150
OCR Text	...0.10V. Note 8: TRI-STATE may be attained using OE or CE . Note 9: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 MF ceramic capacitor be used on every device between VC...
Description	2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] 2097152-Bit (256K x 8) UV Erasable CMOS EPROM 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM 2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
File Size	119.90K / 14 Page	View it Online	Download Datasheet

For attained Found Datasheets File :: 875 Search Time::1.469ms
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