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SGS Thomson Microelectronics
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Part No. |
AN1227
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OCR Text |
...r bipolar junction transistors (bjt). The NP package will be used for the STMicroelectronics RF power MOSFETs. The justification for this decision will be axiomatic from the following discussion. Figures 1 and 2 depict the geometry and mate... |
Description |
IMPROVED RF MOSFET RELIABILITY THROUGH PACKAGING ENHANCEMENTS
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File Size |
50.24K /
4 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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Part No. |
AN472
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OCR Text |
...p and high current density like bjt devices. the former is a very important point because it implies a loss reduction, hence costs decrease in making the driving stage, while the latter makes it suitable for high current applications. igbt ... |
Description |
DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS
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File Size |
43.98K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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