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tmos Datasheet PDF File

For tmos Found Datasheets File :: 712 Search Time::2.563ms
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				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text	tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description	tmos POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM From old datasheet system
File Size	162.64K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text	tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description	tmos POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM From old datasheet system
File Size	159.45K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also ...
Description	From old datasheet system tmos POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
File Size	139.95K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Motorola, Inc
Part No.	MTP5N40E ON2629
OCR Text	tmos E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a...
Description	From old datasheet system tmos POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
File Size	258.42K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text	...D Motorola Preferred Device tmos POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM TM D G CASE 221A-06, Style 5 TO-220AB S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RG...
Description	From old datasheet system tmos POWER FET 60 AMPERES 50 VOLTS tmos POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
File Size	216.88K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP6N60E
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	tmos POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS
File Size	153.44K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP8N06 MTP8N06E
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description	tmos POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
File Size	212.56K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	From old datasheet system tmos POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
File Size	154.26K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTSF1P02HD ON2655
OCR Text	...nd Storage Temperature Range tmos Single P-Channel Field Effect Transistor MTSF1P02HD Motorola Preferred Device SINGLE tmos POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM TM D CASE 846A-02, Style 1 Micro8 S Source S...
Description	SINGLE tmos POWER MOSFET SINGLE tmos POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
File Size	342.01K / 12 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTW33N10E ON2695
OCR Text	tmos E FET.TM Power Field Effect Transistor TO 247 with Isolated Mounting Hole MTW33N10E Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanch...
Description	tmos POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
File Size	227.85K / 8 Page	View it Online	Download Datasheet

For tmos Found Datasheets File :: 712 Search Time::2.563ms
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Price and Availability

Price & Availability of tmos

Part #	Manufacturer	Description	Price	BuyNow Qty.
REFFRIDGED111TMOSTOBO1 52AJ5824	Infineon Technologies AG	Ref Design Brd, Refrigerator Compressor Rohs Compliant: Yes \|Infineon REFFRIDGED111TMOSTOBO1	1: USD213.06	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
TMOS00-03 FOR TMOS 221004 EVK-WHITE 3929-TMOS00-03FORTMOS221004EVK-WHITE-ND	Fresnel Factory Inc	SENSOR OPT IR LENS DIA 10	1000: USD4.242 500: USD4.545 100: USD4.848 25: USD5.6056 10: USD6.06 1: USD7.58	167
TMOS63-10 FOR TMOS 221004 EVK-WHITE 3929-TMOS63-10FORTMOS221004EVK-WHITE-ND	Fresnel Factory Inc	SENSOR OPT TMOS IR LENS DIA 10M	1000: USD4.242 500: USD4.545 100: USD4.848 25: USD5.6056 10: USD6.06 1: USD7.58	166
TMOS10-12030 FOR STHS34PF80 EVK-WHITE 3929-TMOS10-12030FORSTHS34PF80EVK-WHITE-ND	Fresnel Factory Inc	SENSOR OPT TMOS IR FOC LEN 10MM	1000: USD4.242 500: USD4.545 100: USD4.848 25: USD5.6056 10: USD6.06 1: USD7.58	87
REFFRIDGED111TMOSTOBO1 448-REFFRIDGED111TMOSTOBO1-ND	Infineon Technologies AG	REF BOARD FRIDGE_D111T_MOS	1: USD204.88	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
REFFRIDGED111TMOSTOBO1 726-REFFRIDD111TMOS1	Infineon Technologies AG	Power Management IC Development Tools REF_FRIDGE_D111T_MOS	1: USD209.73	3
FA11206_TINA-M 928-FA11206TMOSL	LEDIL	LED Lighting Lenses Assemblies OSRAM OSLON SSL SNGL LENS HLDR & TAPE	1: USD3.68 10: USD2.6 25: USD2.36 144: USD2.26 288: USD1.8 432: USD1.78 864: USD1.74 2448: USD1.69 4896: USD1.63	190

Part #	Manufacturer	Description	Price	BuyNow Qty.
F073219 (ALTERNATE: GITMOS020000HA20 L000X00) 72265626	GEFRAN spa	Top single/dual axis inclinometer (XY/360) \| Gefran F073219	1: USD428.48	0
F073150 (ALTERNATE: GITMOS045000HC10 0000X00) 72265629	GEFRAN spa	Top single/dual axis inclinometer (XY/360) \| Gefran F073150	1: USD459.9	0
F073218 (ALTERNATE: GITMOS085000HA20 L000X00) 72265632	GEFRAN spa	Top single/dual axis inclinometer (XY/360) \| Gefran F073218	1: USD428.48	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
VO3120-X007T VO3120-X007T	Vishay Intertechnologies	Optically Isolated Gate Drivers 2.5A Current Out IGBT/MOSFET Drvr	1000: USD0.9 2000: USD0.86 5000: USD0.84 10000: USD0.83	9000
TPN1600ANH,L1Q TPN1600ANHL1Q	Toshiba America Electronic Components	MOSFETs N-CH DTMOS VII-H 42W 1230PF 36	5000: USD0.33 10000: USD0.324 20000: USD0.318	5000
SSM6K513NU,LF SSM6K513NULF	Toshiba America Electronic Components	MOSFETs SMALL SIGNAL MOSFET	3000: USD0.135 6000: USD0.133 9000: USD0.13 24000: USD0.128 30000: USD0.125	15000
TK31V60X,LQ TK31V60XLQ	Toshiba America Electronic Components	MOSFETs MOSFET TRAN DTMOS	2500: USD2.4	7500
SSM3K361R,LF SSM3K361RLF	Toshiba America Electronic Components	MOSFETs SMALL-SIGNAL NCH MOSFET	3000: USD0.149 6000: USD0.146 9000: USD0.143 24000: USD0.14 30000: USD0.138	33000

Part #	Manufacturer	Description	Price	BuyNow Qty.
REFFRIDGED111TMOSTOBO1	Infineon Technologies AG	Infineon MOSFET栅极驱动器参考设计, 电源，电动机和机器人开发工具, IPN60R1K0PFD7S芯片		6