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For u003d Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier, Corp.
Part No.	IRG4BC30KD IRG4BC30KDPBF
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.21V，@和VGE \u003d 15V的，集成电路\u003d 16A条） 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
File Size	192.51K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRG4BC30U-S
Description	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速（VCES和\u003d 600V电压的Vce（on）的典型。\u003d 1.95V，@和VGE \u003d 15V的，集成电路\u003d 12A条） 600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
File Size	315.06K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL
Description	320 x 240 pixel format, LED or CFL Backlight 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.85V，@和VGE \u003d 15V的，集成电路\u003d 6.5A TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 6.5A I(C) \| TO-263AB INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
File Size	233.71K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFB4710
Description	Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A) 功率MOSFET（减振钢板基本\u003d 100伏时，RDS（on）的最大值\u003d 0.014ohm，身份证\u003d 75A条）
File Size	245.17K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	JANTXV2N6851 JANTX2N6851
Description	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道（BVdss \u003d-00V，的Rds（on）\u003d 0.80ohm，身份证\u003d- 4.0a上）
File Size	196.87K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	MIL-PRF-19500/564
Description	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) 功率MOSFET P沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.30ohm，身份证\u003d- 6.5A
File Size	132.64K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFY130CM
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A) 功率MOSFET N沟道（BVdss \u003d 100V的，的Rds（on）\u003d 0.18ohm，身份证\u003d 14.4A
File Size	294.72K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF7451
Description	Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 150伏时，RDS（on）的最大值\u003d 0.09ohm，身份证\u003d 3.6A
File Size	208.18K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFY440CM
Description	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道（BVdss \u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 7.0A
File Size	262.88K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRHN8230 IRHN7230
Description	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
File Size	450.04K / 14 Page	View it Online	Download Datasheet

For u003d Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |