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  -43a Datasheet PDF File

For -43a Found Datasheets File :: 955    Search Time::1.562ms    
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    RJK0629DPK RJK0629DPK-00-T0

Renesas Electronics Corporation
Part No. RJK0629DPK RJK0629DPK-00-T0
OCR Text ... = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7 IF = 85 A, VGS = 0 No...
Description N Channel Power MOS FET High-Speed Switching Use

File Size 108.40K  /  7 Page

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    RJK0629DPN

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Renesas Electronics Corporation
Part No. RJK0629DPN
OCR Text ... = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7 IF = 85 A, VGS = 0 No...
Description N Channel Power MOS FET High-Speed Switching Use

File Size 105.07K  /  7 Page

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    IRFI1010NPBF IRFI1010NPBF-15

International Rectifier
Part No. IRFI1010NPBF IRFI1010NPBF-15
OCR Text ...S, ID = 250A S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 43A ns RG = 3.6 RD = 0.62, See...
Description ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET

File Size 227.74K  /  9 Page

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    BXL4001

Sanyo Semicon Device
Part No. BXL4001
OCR Text ...ons VDS=10V, ID=1mA VDS=10V, ID=43A ID=43A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=85A VDS...
Description General-Purpose Switching Device Applications

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    IRHNB8260

International Rectifier
Part No. IRHNB8260
OCR Text 43a irhnb8260 200v 0.070? 43a features: radiation hardened up to 1 x 10 6 rads (si) single event burnout (seb) hardened single event gate rupture (segr) hardened gamma dot (flash x-ray) hardened neutron tolerant identical pre- ...
Description 200Volt,0.070惟, N-Channel MEGA RAD HARD HEXFET(200V,0.070惟,MEGA ???灏?娌??HEXFET?朵?绠?

File Size 109.44K  /  8 Page

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    IRFP054N

IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
Part No. IRFP054N
OCR Text ...D = 1mA 0.012 VGS = 10V, I D = 43A 4.0 V VDS = VGS , ID = 250A --- S V DS = 25V, I D = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 I D = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6...
Description Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.012ohm,身份证\u003d 81A条?

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    RJK0629DPK RJK0629DPK13 RJK0629DPK-15

Renesas Electronics Corporation
Part No. RJK0629DPK RJK0629DPK13 RJK0629DPK-15
OCR Text ... v ds(on) ? 161 194 mv i d = 43a, v gs = 10 v note 4 ? 3.75 4.5 m ? i d = 43a, v gs = 10 v note 4 static drain to source on state resistance r ds(on) ? 4.9 6.6 m ? i d = 43 a, v gs = 4.5 v note 4 input capacitance ciss...
Description 60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use

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    RJK0629DPN RJK0629DPN-00-T2 RJK0629DPN-15

Renesas Electronics Corporation
Part No. RJK0629DPN RJK0629DPN-00-T2 RJK0629DPN-15
OCR Text ... v ds(on) ? 161 194 mv i d = 43a, v gs = 10 v note 4 ? 3.75 4.5 m ? i d = 43a, v gs = 10 v note 4 static drain to source on state resistance r ds(on) ? 4.9 6.6 m ? i d = 43 a, v gs = 4.5 v note 4 input capacitance ciss...
Description 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use

File Size 101.89K  /  7 Page

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    RJK0629DPE RJK0629DPE-15

Renesas Electronics Corporation
Part No. RJK0629DPE RJK0629DPE-15
OCR Text ... v ds(on) ? 161 194 mv i d = 43a, v gs = 10 v note 4 ? 3.75 4.5 m ? i d = 43a, v gs = 10 v note 4 static drain to source on state resistance r ds(on) ? 4.9 6.6 m ? i d = 43 a, v gs = 4.5 v note 4 input capacitance ciss...
Description 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use

File Size 103.23K  /  7 Page

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