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				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text	...4E20N60A4DS 600 70 40 280 20 30 100a at 600V 290 2.32 -55 to 150 260 UNITS V A A A V V W W/oC oC oC Collector to Emitter Voltage . . . . ...1200 1000 800 600 400 200 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 15 20 25 30 35 ICE , COLLECTOR TO EMIT...
Description	CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	162.96K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60A4 HGTP20N60A4
OCR Text	... . . . . . TPKG 70 40 280 20 30 100a at 600V 290 2.32 -55 to 150 300 260 W W/oC oC oC oC UNITS V A A A V V 600 CAUTION: Stresses a...1200 1000 800 600 400 200 0 EOFF, TURN-OFF ENERGY LOSS (J) RG = 3, L = 500H, VCE = 390V 800...
Description	600V, SMPS Series N-Channel IGBTs
File Size	137.64K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	... IEC = 20A IEC = 20A, dIEC/dt = 100a/s IEC = 1A, dIEC/dt = 100a/s IGBT Diode VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC...1200 1000 800 600 400 200 0 0 EOFF, TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 10, L = 100H ...
Description	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP20N60CFD
OCR Text	...IF=I S V R=480V, IF=IS , diF/dt=100a/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 150 1 13 1400 max. 20.7 52 1.2 - Unit...1200 1400 1100 1000 Tj = 25C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 C T...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	164.33K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW20N60CFD
OCR Text	...IF=I S V R=480V, IF=IS , diF/dt=100a/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 150 1 13 1400 max. 20.7 52 1.2 - Unit...1200 1400 1100 1000 Tj = 25C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 C T...
Description	Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS?/a> Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
File Size	161.83K / 12 Page	View it Online	Download Datasheet

				Zetex Semiconductors Diodes Incorporated
Part No.	FZT1048A
OCR Text	...t V(BR)CBO 50 TYP. 85 MAX. V IC=100a UNIT CONDITIONS. VCES 50 85 V IC=100a* IC=10mA IC=100a, VEB=1V IE=100a VCB=35V VEB=4V VC...1200 IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V* MHz IC=50mA,...
Description	NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	131.24K / 3 Page	View it Online	Download Datasheet

				Zetex Semiconductors Diodes Incorporated
Part No.	FZT1051A
OCR Text	... 190 MAX. UNIT V CONDITIONS. IC=100a VCES 150 190 V IC=100a * IC=10mA VCEO 40 60 V VCEV 150 190 V ...1200 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz...
Description	NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR
File Size	45.99K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	FZT1053 FZT1053A
OCR Text	... mV mV UNIT CONDITIONS. I C=100a I C =100a I C =10mA I C =100a, V EB=1V I E=100a V CB=120V V EB=4V V CES =120V I C=0.2A, I B=20mA* I C=0...1200 Switching Times t on t off ns IC=2A, IB1=IB2=20mA, VCC=50V IC=2A, IB1=IB2=20mA, V C...
Description	NPN Med Power Transistor SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	61.09K / 4 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	FZT788 FZT788B FZT788BTA FZT788B-15
OCR Text	...MIN. -15 -15 -5 CONDITIONS. IC=-100a IC=-10mA* IE=-100a VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=...1200 900 600 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=200 h 0....
Description	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	80.19K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7389 IRF7389TR
OCR Text	...66 TJ = 25C, I F =1.7A, di/dt = 100a/s 58 87 P-Channel nC TJ = 25C, I F = -1.7A, di/dt = 100a/s 42 63 Repetitive rating; pulse width ...1200 IRF7389 ID = 5.8A VDS = 15V VGS , Gate-to-Source Voltage (V) A V GS = 0V, f = 1MHz C...
Description	Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	210.72K / 10 Page	View it Online	Download Datasheet

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