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  1300v Datasheet PDF File

For 1300v Found Datasheets File :: 211    Search Time::1.329ms    
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    BUH713

Inchange Semiconductor Company Limited
Part No. BUH713
OCR Text ...n voltage IC=7A ;IB=1.5A VCE=1300v; VBE=0 Tj=125ae VEB=5V; IC=0 1.3 1 2 100 |I V ICES Collector cut-off current mA IEBO Emitter cut-off current A hFE DC current gain Switching times ts IC=...
Description Silicon NPN Power Transistors

File Size 114.85K  /  3 Page

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    BUV70

Inchange Semiconductor Company Limited
Part No. BUV70
OCR Text ...mA IC= 9A; IB= 3A B VCE= 1300v; VBE= 0 VCE= 1200V; VBE= 0; TC=125 IC= 3.2A; VCE= 2V IC= 1.5A; VCE= 5V IC= 6A; VCE= 2V IC= 0.5A; VCE= 10V, f= 1MHz MHz Switching times Resistive Load ton ts tf Turn-on Time Storage Time Fall Time ...
Description isc Silicon NPN Power Transistor

File Size 75.89K  /  2 Page

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    BU903

Inchange Semiconductor Company Limited
Part No. BU903
OCR Text ....2A;IB=0.8A IC=3.2A;IB=0.8A VCB=1300v;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=5V 8 MIN 550 7 2.0 1.3 1.0 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE HAN INC SEM GE OND IC TOR UC 2...
Description Silicon NPN Power Transistors

File Size 116.83K  /  3 Page

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    HD1760JL HD1760JL07

STMicroelectronics
Part No. HD1760JL HD1760JL07
OCR Text ...1.3A IB(off) = -5.8A VCE(fly) = 1300v VBE(off) = -2.7V LBB(on) = 0.25H 2.6 300 s ns ts tf Inductive load Storage time Fall time 2 110 s ns 1. Pulsed duration = 300 ms, duty cycle 1.5%. 3/10 Electrical characterist...
Description Very high voltage NPN power transistor for high definition and slim CRT display

File Size 236.83K  /  10 Page

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    BUH515D

Savantic, Inc.
Part No. BUH515D
OCR Text ...A ;IB=1.25A IC=5A ;IB=1.25A VCE=1300v; VBE=0 VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V IF=5A 5 MIN BUH515D SYMBOL VCEsat VBEsat ICES-1 ICES-2 IEBO hFE VF TYP. MAX 1.5 1.3 10 0.2 2 200 10 2 UNIT V V A mA mA V S...
Description Silicon NPN Power Transistors

File Size 143.54K  /  3 Page

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    BUH713

Savantic, Inc.
Part No. BUH713
OCR Text ...=7A ;IB=1.5A IC=7A ;IB=1.5A VCE=1300v; VBE=0 Tj=125 VEB=5V; IC=0 IC=7A ; VCE=5V 8 MIN 700 10 TYP. BUH713 SYMBOL VCEO(sus) VEBO VCEsat VBEsat ICES IEBO hFE MAX UNIT V V 1.5 1.3 1 2 100 V V mA A Switching times ts tf Stor...
Description Silicon NPN Power Transistors

File Size 143.13K  /  3 Page

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    GMG116N60 GMG116N40 GMG1N

Green Power Solutions srl
Part No. GMG116N60 GMG116N40 GMG1N
OCR Text ... 16 VRRM 1200V 1400V 1600V VRSM 1300v 1500V 1700V 14,5 16,5 22 FIX. M5 92 20,7 + 14,4 20 - 80 92 Document GMG1...N..T003 30
Description SINGLE-PHASE RECTIFIER BRIDGE

File Size 18.43K  /  1 Page

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    DIM400DDM12-A000

Dynex Semiconductor
Part No. DIM400DDM12-A000
OCR Text ... AC RMS, 1 min,50Hz IEC1287.V1 =1300v, V2 =1000V, 50Hz RMS 400 800 3470 25 2500 10 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index) AlN AlSiC...
Description Dual Switch IGBT Module

File Size 611.43K  /  8 Page

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    DIM400DDM17-A00009

Dynex Semiconductor
Part No. DIM400DDM17-A00009
OCR Text ... 50Hz IEC1287, V1 = 1800V, V2 = 1300v, 50Hz RMS 400 800 3470 30 4000 10 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Comparative Tracking Index): AlN AlSiC 20mm 1...
Description Dual Switch IGBT Module

File Size 275.21K  /  8 Page

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    DIM800DDM17-A00009

Dynex Semiconductor
Part No. DIM800DDM17-A00009
OCR Text ... 50Hz IEC1287, V1 = 1800V, V2 = 1300v, 50Hz RMS 800 1600 6940 120 4000 10 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Comparative Tracking Index): AlN AlSiC 20mm...
Description Dual Switch IGBT Module

File Size 276.19K  /  8 Page

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For 1300v Found Datasheets File :: 211    Search Time::1.329ms    
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