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  900v 20ma Datasheet PDF File

For 900v 20ma Found Datasheets File :: 72    Search Time::1.375ms    
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    Mitsubishi Electric Corporation
Part No. CT60AM-18B
OCR Text 900v i c ......................................................................................... 60a integrated fast recovery diode v ge...20ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v ge = 0v i c = 1ma 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE
File Size 46.91K  /  4 Page

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    SANYO
Part No. 2SC4579
OCR Text ...fused planar silicon transistor 900v/20ma switching applications ordering number:en3243 2sc4579 11599ha (kt)/o269mo, ts no.3243C1/3 specifications absolute maximum ratings at ta = 25?c package dimensions unit:mm 2010c [2sc4579] features ...
Description NPN Triple Diffused Planar Silicon Transistor 900v/20ma Switching Applications
File Size 101.07K  /  3 Page

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    Westcode Semiconductors
Part No. T1400TA18A
OCR Text ...=1400a t1400ta18a issue 1 v ce =900v v ge =15v t j =125c 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 gate resistance - r g(on) ( ? ? ? ? ) turn-on rise time - t r (s) i c =1400a i c =700a t1400ta18a issue 1 v ce =900v v ge =15v t j =125c figure 11...
Description Insulared Gate Bi-polar Transistor
File Size 158.33K  /  14 Page

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    FP35R12W2T4 INFINEONTECHNOLOGIESAG-FP35R12W2T4

Infineon Technologies AG
Part No. FP35R12W2T4 INFINEONTECHNOLOGIESAG-FP35R12W2T4
OCR Text ...lussverhalten scdata v??15v,v??=900v v???=v???l??di/dt i?? 130 a ty?=150c t?10s, innererw?rmewiderstand thermalresistance,junctiontoca...20ma,v??=v??,ty?=25c v?? 5,2 5,8 6,4 v gateladung gatecharge v??=15v...+15v q? 0,27 c internergate...
Description EasyPIM?/a> module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
File Size 533.90K  /  12 Page

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