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cl3-3-3 Datasheet PDF File

For cl3-3-3 Found Datasheets File :: 1092 Search Time::2.578ms
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				Hynix Semiconductor
Part No.	HY57V641620ELTP-5 HY57V641620ELTP-6 HY57V641620ELTP-7 HY57V641620ELTP-H HY57V641620ET HY57V641620ESTP-5 HY57V641620ESTP-6 HY57V641620ESTP-7 HY57V641620ESTP-H HY57V641620ET-5 HY57V641620ET-6 HY57V641620ET-7 HY57V641620ET-H HY57V641620EL/STP-5 HY57V641620EL/STP-6 HY57V641620EL/STP-7 HY57V641620EL/STP-H
OCR Text	...OH: 2.0 --> 2.5 [tCK = 7 & 7.5 (CL3) Product] 1. Changed Input High/Low Voltage (Page 08) 2. Changed DC characteristics (Page 09) - IDD2NS: ...3. Changed Clock High / Low pulse width Time (Page 11) 4. Changed tAC Time (Page11) 5. Changed tRRD ...
Description	SDRAM - 64Mb 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
File Size	108.34K / 13 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M366S0924F M374S3323FTU-C7A M366S0924FTS M366S0924FTS-C7A M366S1723FTS-C7A M366S1723FTU-C7A M366S3323FT M366S3323FTS-C7A M366S3323FTU-C7A M374S1723FTS-C7A M374S1723FTU-C7A M374S3323FTS-C7A
OCR Text	... Operating Frequencies -7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and output...
Description	SDRAM Unbuffered Module
File Size	483.53K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M366S6453ET M374S6453ETU-C7A M366S1654ETS-C7A M366S3253ETS-C7A M366S3253ETU-C7A M366S6453ETS-C7A M366S6453ETU-C7A M374S3253ETS-C7A M374S3253ETU-C7A M374S6453ETS-C7A
OCR Text	...l Operating Frequencies 7A @CL3 Maximum Clock Frequency CL-tRCD-tRP(clock) 133MHz(7.5ns) 3-3-3 @CL2 100MHz(10ns) 2-2-2 Feature Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and output...
Description	SDRAM Unbuffered Module
File Size	483.55K / 26 Page	View it Online	Download Datasheet

				Winbond
Part No.	W941232AD
OCR Text	... -5 parts can run up to 200 MHz/CL3. All inputs reference to the positive edge of CLK (except for DQ, DM, and CKE). The timing reference poi...3 and 4 Burst Length: 2, 4 and 8 Auto Refresh and Self Refresh Precharged Power Down and Active Powe...
Description	128Mb DDR
File Size	528.07K / 29 Page	View it Online	Download Datasheet

				Winbond
Part No.	W982516AH
OCR Text	... -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the PC133/CL3 specification, the -8H is compliant to...3.3V 0.3V Power Supply Up to 143 MHz Clock Frequency 4,194,304 Words x 4 Banks x 16 Bits Organizatio...
Description	4m x 8 bit x 16 Banks SDRAM
File Size	1,366.44K / 41 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H560838F-UC K4H560838F-UCC4 K4H560838F-UCCC
OCR Text	...ncies - CC(DDR400@CL=3) Speed @CL3 CL-tRCD-tRP *CL : CAS Latency 200MHz 3-3-3 - C4(DDR400@CL=3) 200MHz 3-4-4 Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) Pin Description DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 ...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.93K / 19 Page	View it Online	Download Datasheet

				Infineon Technologies Corporation
Part No.	HYS72T128020HP-3S-A
OCR Text	...max. Clock Frequency @CL5 @CL4 @CL3 min. RAS-CAS-Delay min. Row Precharge Time min. Row Active Time min. Row Cycle Time -3S PC2-5300 5-5-...3.7]-A Registered DDR2 SDRAM Modules with parity Overview Table 2 Performance for PC2-4200-44...
Description	240-Pin Registered DDR2 SDRAM Modules
File Size	1,687.57K / 61 Page	View it Online	Download Datasheet

				Infineon Technologies Corporation
Part No.	HYS72T128020HR-3.7-B HYS72T128000HR-5-B HYS72T128020HR-5-B HYS72T128000HR-3.7-B HYS72T64000HR-5-B HYS72T256220HR-3.7-B HYS72T256220HR-5-B
OCR Text	...max. Clock Frequency @CL5 @CL4 @CL3 min. RAS-CAS-Delay min. Row Precharge Time min. Row Active Time min. Row Cycle Time -3.7 PC2-4200 4-4-4 Unit -- MHz MHz MHz ns ns ns ns fCK5 fCK4 fCK3 tRCD tRP tRAS tRC 266 266 200 15 15 45 60...
Description	240-Pin Registered DDR2 SDRAM Modules
File Size	1,518.18K / 50 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
OCR Text	...mance range D5(DDR2-533) Speed@CL3 Speed@CL4 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps CK * JEDEC standard 1.8V 0.1V Power Supply * VDDQ = 1.8V 0.1V * 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/p...
Description	40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
File Size	325.20K / 19 Page	View it Online	Download Datasheet

				Winbond
Part No.	W986416BH W986416B2
OCR Text	...e -7 parts can run up to 143Mhz/CL3, the -75 parts are compliant to the PC133/CL3 specification, the -8H parts are compliant to the PC100/CL...3 SENSE AMPLIFIER SENSE AMPLIFIER NOTE: The cell array configuration is 4096 * 256 * 16. ...
Description	1M x 16 bit x 4 Banks SDRAM From old datasheet system
File Size	2,051.77K / 42 Page	View it Online	Download Datasheet

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