...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERIN...non power-down mode
mA 10 6 6 30 mA
ICC2NS ICC3P ICC3PS ICC3N
Active standby current in pow...
Description
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERIN...non power-down mode
mA 10 6 6 30 mA
ICC2NS ICC3P ICC3PS ICC3N
Active standby current in pow...
Description
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Orderin...non power-down mode Active standby current in power-down mode Active standby current in non power-do...
...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Orderin...non power-down mode Active standby current in power-down mode Active standby current in non power-do...
...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
* * * *...non power-down mode
CKE VIH(min), CLK VIL(max), tCC = ICC2NS Input signals are stable ICC3P CK...
Description
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
...mmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
* * * *...non power-down mode
CKE VIH(min), CLK VIL(max), tCC = ICC2NS Input signals are stable ICC3P CK...
Description
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
...ficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed sw...non-linearly with an increase of peak current in avalanche and peak junction temperature.
125 100...
Description
From old datasheet system TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
...rrent limit circuits. While the device is well protected, the Safe Operating Area (SOA) curve must be observed. Proper heatsinking is requir...non-inverting gain of 2.8. Amp B is set up as a unity gain inverter driven from the output of amp A....
Description
POWER DUAL OPERATIONAL AMPLIFIERS POWER DUAL OPERATIONAL AMPLIFIERS 功耗双运算放大