...nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
...copper Clad PTFE r = 2.5, .031" Thick
Ericsson Components RF Power Products 675 Jarvis Drive Morg...
...nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
...copper Bottom
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Te...
Description
55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor
...nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
175 Wa...copper Bottom
5/11/98
PTB 20190
e
Artwork (1 inch
)
Ericsson Components RF Power P...
Description
175 Watts, 470-806 MHz Digital Television Power Transistor
...nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. * * *...copper Bottom
Artwork (1 inch
)
Ericsson Components RF Power Products 675 Jarvis Drive Morg...
Description
70 Watts/ 925-960 MHz Cellular Radio RF Power Transistor 70 Watts, 925-960 MHz Cellular Radio RF Power Transistor
...xide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability....copper-clad printed-circuit board Teflon fibreglass dielectric.
Fig.5 Prematching test circuit bo...
...tions in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.
Features
* Typical EDGE performanc...copper Dimensions: L x W (mm) 10.92 x 1.37 7.87 x 1.37 11.30 x 12.45 0.64 x 8.86 23.88 x 0.71 18.29 ...
Description
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
...tions in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
EDGE EVM Performance EVM & Efficiency...copper, both sides Dimensions: L x W (in.) 0.400 x 0.074 0.195 x 0.074 0.281 x 0.721 0.190 x 0.030 0...
Description
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦,DCS / PCS的兆赫波8050年,1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz