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For idss Found Datasheets File :: 28430    Search Time::1.156ms    
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    EFA072ANBSP EFA072A

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA072ANBSP EFA072A
OCR Text ...ENCY, LINEARITY AND RELIABILITY idss SORTED IN 15mA PER BIN RANGE EFA072A Low Distortion GaAs Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1dB G1dB PAE idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at...
Description Low Distortion GaAs Power FET

File Size 42.48K  /  2 Page

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    Execlics
Part No. EFA080A-100F
OCR Text ... f=12ghz vds=8v, ids=50% idss 24.0 26.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss 6.0 7.5 db pae power added eff...
Description Low Distortion GaAs Power FET

File Size 55.71K  /  2 Page

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    EMA303D-2

Excelics Semiconductor, Inc.
Part No. EMA303D-2
OCR Text ...ssion @ vdd= 8v ; id= 0.5 idss @ vdd=6v ; id= 0.5 idss 21.5 19.5 2 3 2 1 dbm g ss small signal gain @ vdd=6v ; id= 0.5 idss 20 22 d b d d gss small signal gain flatness 1 .5 db nf ...
Description 19.5 - 24 GHz Medium Power MMIC

File Size 150.29K  /  4 Page

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    Siliconix
Vishay
Part No. J174 J177 J176 SST177 70257
OCR Text ...ax Unit V(BR)GSS VGS(off) idss IGSS IG ID( ff) D(off) rDS(on) VGS(F) IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C ...
Description TRANSISTOR JUNCTION FET
From old datasheet system
P-Channel JFETs

File Size 70.60K  /  6 Page

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    Micross Components
Part No. LSK170ASOT-23 LSK170ATO-92 LSK170BSOT-23 LSK170BTO-92 LSK170CSOT-23 LSK170CTO-92
OCR Text ...equency with a narrow range of idss and low capacitance. the 2sk170 / lsk170?s low noise to capacitance ratio and narrow range of low value idss provide solutions for low noise applications which cannot tolerate high values of capacitan...
Description an Ultra Low Noise Single N-Channel JFET

File Size 466.41K  /  1 Page

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    FH101

TriQuint Semiconductor
Part No. FH101
OCR Text ... max saturated drain current, idss (2) ma 100 140 170 transconductance, gm ms 120 pinch-off voltage, vp (3) v -3 -1.5 rf parameter units min typ max operational bandwidth mhz 50 ? 4000 test frequency mhz...
Description GaAs MESFET

File Size 355.45K  /  7 Page

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    EMP112

Excelics Semiconductor, Inc.
Part No. EMP112
OCR Text ...h tone pout 20dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -5 db idss saturated drain current vds =3v, v gs =0v 980 1140 1350 ma vds drain to source...
Description 5.0 - 7.2 GHz Power Amplifier MMIC

File Size 208.95K  /  3 Page

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    EMP111

Excelics Semiconductor, Inc.
Part No. EMP111
OCR Text ... tone pout 17dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -6 db idss saturated drain current vds =3v, v gs =0v 475 620 750 ma vds drain to ...
Description 7.0 - 9.0 GHz Power Amplifier MMIC

File Size 198.43K  /  3 Page

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7294 FN4292
OCR Text ...o Gate Voltage Drain Current idss IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf Qg(TOT) Qg(10) Qg(TH) Qgs Qgd RJC RJA VDS = 160V, VGS = 0V VGS = 20V VGS = 10V, ID = 23A ID = 15A, VGS = 10V Gate to Source Leakage Current Drain to Sou...
Description 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET
23A, 200V, 0.115 Ohm, Rad Hard,N-Channel Power MOSFET
From old datasheet system
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET

File Size 47.67K  /  7 Page

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    EMP109

Excelics Semiconductor, Inc.
Part No. EMP109
OCR Text ...ch tone pout 17dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -6 db idss saturated drain current vds =3v, v gs =0v 490 570 660 ma vd...
Description 5.0 - 6.5 GHz Power Amplifier MMIC

File Size 193.63K  /  3 Page

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