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methodology Datasheet PDF File

For methodology Found Datasheets File :: 1655 Search Time::1.563ms
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				NXP Semiconductors
Part No.	AFT09S220-02N AFT09S220-02NR3
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1c machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pe...
Description	N-Channel Enhancement-Mode Lateral MOSFET
File Size	473.18K / 19 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NR108
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF5S19060NR1 MRF5S1...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	593.70K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09S200W02N AFT09S200W02GNR3 AFT09S200W02NR3
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pea...
Description	N-Channel Enhancement-Mode Lateral MOSFET
File Size	854.44K / 19 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW7IC930NBR1 MW7IC930NR1 MW7IC930GNR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Leve...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	668.62K / 22 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09MS015N AFT09MS015NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivi...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	852.39K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09MS007N AFT09MS007NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) b, passes 200 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivi...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	1,413.46K / 28 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivi...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
File Size	960.64K / 21 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFG35002N6AT1
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007, 2008. All rights reserved. MRFG35002N6AT1...
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
File Size	185.45K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT05MS006N AFT05MS006NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivi...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	988.23K / 23 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	AFT05MS004N AFT05MS004NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1c, passes 1000 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitiv...
Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
File Size	1,164.31K / 23 Page	View it Online	Download Datasheet

For methodology Found Datasheets File :: 1655 Search Time::1.563ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |