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pbga63 Datasheet PDF File

For pbga63 Found Datasheets File :: 54+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> |

					Spansion, Inc.
Part No.	S29JL064H60TAI002 S29JL064H70TAI002 S29JL064H60BFI002 S29JL064H70TAN003
Description	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 60 ns, PDSO48 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 70 ns, PDSO48 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 60 ns, pbga63
File Size	930.42K / 64 Page	View it Online	Download Datasheet

					NEC Corp. NEC, Corp.
Part No.	UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH UPD29F064115GZ-MJH UPD29F064115GZ-EB85X-MJH UPD29F064115F9-EB85X-CD6 UPD29F064115F9-DB85X-CD5 UPD29F064115F9-EB85X-CD5 UPD29F064115F9-DB80X-CD5 UPD29F064115F9-EB90X-CD5 UPD29F064115F9-DB80X-CD6 UPD29F064115F9-DB85X-CD6 UPD29F064115F9-EB90X-CD6 UPD29F064115F9-CD5 UPD29F064115F9-CD6
Description	Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:150VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes CONNECTOR ACCESSORY Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes 6400CMOS低电压双堆叠式存储器分词6位（字模式）页面模式 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE 6400位CMOS低电压双堆叠式存储器分词6位（字模式）页面模式 4M X 16 FLASH 1.8V PROM, 80 ns, pbga63
File Size	251.84K / 32 Page	View it Online	Download Datasheet

					Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
Part No.	AM29LV641DH101RZI AM29LV640DU101RZI AM29LV640DH101RZI AM29LV640DH101RZIN AM29LV640DU101RZIN AM29LV641DL101RZI AM29LV640DL101RZI AM29LV641DH101RWHIN AM29LV641DH120RWHIN AM29LV641DH121RWHIN AM29LV641DH90RWHIN AM29LV641DL101RWHIN AM29LV641DL120RWHIN AM29LV641DL121RWHIN AM29LV641DL90RWHIN AM29LV641DU101RWHI AM29LV640DH101RPCE AM29LV640DH101RPCEN AM29LV640DH101RPCI AM29LV640DH101RPCIN AM29LV641DH101RPCE AM29LV641DH101RPCEN AM29LV640DH121RWHE AM29LV640DH121RWHEN AM29LV640DH120RZEN AM29LV640DH121RZEN AM29LV640DH90RZI AM29LV640DH120RZI AM29LV640DH101RZEN AM29LV640DH121RZIN AM29LV641DL120RZE AM29LV641DH90RZE AM29LV641DH90RZEN AM29LV640DL101RZE AM29LV640DL101RZEN AM29LV641DH120RZE AM29LV640DU90RZE AM29LV640DH90RZE AM29LV640DH90RZEN AM29LV640DL120RZE AM29LV640DL90RZE AM29LV640DL90RZEN AM29LV640DU120RZE AM29LV640DH120RZIN AM29LV640DH101REE AM29LV640DH101REEN AM29LV640DH101REI AM29LV640DH101REIN AM29LV640DH101RFE AM29LV640DH101RFEN AM29LV640DH101RFI AM29LV640DH101RFIN AM29LV640DH101RWHE AM29LV640DH101RWHEN AM29LV640DH101RWHI AM29LV640DH101RWHIN AM29LV640DU90RZIN AM29LV641DU90RWHEN AM29LV640DU90RZEN AM29LV641DU121RZIN AM29LV640DL121RZIN AM29LV640DU121RZI AM29LV641DH101RZE AM29LV641DH101REEN AM29
Description	RF Coaxial Connector Adapter; Convert From:TNC Plug; Convert To:N Jack RoHS Compliant: Yes RF Coaxial Connector Adapter; Convert From:TNC Plug; Convert To:BNC Jack RoHS Compliant: Yes 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor CONTROLLERS,TYPE 4950 7-DAY PROGRAMMABLE CONTROLLERS,CONTROLLERS,PHOTOMOS RELAY,CONTROLLERS,4950 SERIES 7-DAY PROGRAMMABLE CONTROLLERS ,ARTISAN CONTROLS RoHS Compliant: Yes 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 64兆位个M x 16位）.0伏的CMOS只均匀部门闪光控制记忆与VersatileI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 4M X 16 FLASH 3V PROM, 120 ns, PDSO56 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 64兆位个M x 16位）.0伏的CMOS只均匀部门闪光控制记忆VersatileI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 4M X 16 FLASH 3V PROM, 120 ns, pbga63
File Size	1,039.62K / 57 Page	View it Online	Download Datasheet

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, pbga63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

For pbga63 Found Datasheets File :: 54+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> |

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