r) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-resistance Dynamic dv/dt rating 175C Operating Temperature Fast Swi...g S
ID = 84A
Description
Advanced HEXFET(r) Power MOSFETs from International rectifier utiliz...
...ated Description
l l
HEXFET(r) Power MOSFET
D
IrF1010NS IrF1010NL
VDSS = 55V rDS(on) = 11m
g S
Advanced HEXFET (r) Power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>Power MOSFET(Vdss = 55 V/ rds(on)=11mohm/ Id=85A)<br>Power MOSFET(Vdss = 55 V, rds(on)=11mohm, Id=85A)<br>Power MOSFET(Vdss = 55 V, rds(on)=11mohm, Id=85A?)<br>Power MOSFET(Vdss = 55 V, rds(on)=11mohm, Id=85A?<br>
r) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-resistance Dynamic dv/dt rating 175C Operating Temperature Fast Swi...g S
ID = 85A
Description
Advanced HEXFET(r) Power MOSFETs from International rectifier utiliz...
Description
Power MOSFET(Vdss=55V, rds(on)=11mohm, Id=85A?)<br>Power MOSFET(Vdss=55V, rds(on)=11mohm, Id=85A)<br>
r) Power MOSFET
D
Advanced Process Technology Ultra Low On-resistance Dynamic dv/dt rating 175C Operating Temperature Fast Switching Fully Avalanche rated
VDSS = 40V
g S
rDS(on) = 0.009 ID = 100A
Description
Fifth generation ...
r) Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IrF1310NS) Low-profile through-hole (IrF1310NL) 175C Operating Te...g S
rDS(on) = 0.036 ID = 42A
Description
Fifth generation HEXFETs from International rectifie...
Description
Power MOSFET(Vdss=100V, rds(on)=0.036ohm, Id=42A)<br>
r) Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt rating 175C Operating Temperature Fast Switching Fully Avalanche rated
D
VDSS = 100V
g S
rDS(on) = 0.036 ID = 42A
Description
Fifth generation HEXFETs fro...
Description
Power MOSFET(Vdss=100V/ rds(on)=0.036ohm/ Id=42A)<br>Power MOSFET(Vdss=100V, rds(on)=0.036ohm, Id=42A)<br>
r) Power MOSFET
Advanced Process Technology Ultra Low On-resistance l Dynamic dv/dt rating l 175C Operating Temperature l Fast Switching l ...g S
rDS(on) = 0.004 ID = 162A
Seventh generation HEXFET Power MOSFETs from International recti...
Description
Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A?)<br>Power MOSFET(Vdss=40V, rds(on)=0.004ohm, Id=162A)<br>
r) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-resistance Dynamic dv/dt rating 175C Operating Temperature Fast Switching Fully Avalanche rated
D
VDSS = 40V
g S
rDS(on) = 0.004 ID = 162A
Description
Se...
r) Power MOSFET
D
Electric Power Steering (EPS) Anti-lock braking System (AbS) Wiper Control Climate Control Power Door Advanced Process...g
VDSS = 55V rDS(on) = 5.3m
S
benefits
q q q q q q
ID = 131A
Description
Stripe Plana...
Description
Power MOSFET(Vdss=55V, rds(on)=5.3mohm, Id=131A?<br>Power MOSFET(Vdss=55V/ rds(on)=5.3mohm/ Id=131A)<br>Power MOSFET(Vdss=55V, rds(on)=5.3mohm, Id=131A)<br>Power MOSFET(Vdss=55V, rds(on)=5.3mohm, Id=131A?)<br>55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>
r) Power MOSFET
D
Electric Power Steering (EPS) Anti-lock braking System (AbS) Wiper Control Climate Control Power Door Advanced Process...g
VDSS = 55V rDS(on) = 5.3m
S
benefits
q q q q q q
ID = 169A
Description
Specifically...