|
|
|
ST Microelectronics
|
Part No. |
STW13NB60
|
OCR Text |
to-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ... |
Description |
N-CHANNEL 600V - 0.48 OHM - 13A - to-247/isowatt218 POWERMESH MOSFET
|
File Size |
320.17K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
ST Microelectronics
|
Part No. |
W10NC60
|
OCR Text |
to-247/isowatt218 powermesh?ii mosfet (1)i sd 10a, di/dt 100a/s, v dd v (br)dss , t j t jmax (*) limited only by maximum temperature allowed n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested... |
Description |
Search --To STW10NC60
|
File Size |
261.18K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
Part No. |
STW5NA90 5612 STH5NA90FI
|
OCR Text |
...PICAL RDS(on) = 2.1 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD to-247
3 2 1
3 2 1
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWI... |
Description |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system
|
File Size |
53.72K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
STMICROELECTRONICS[STMicroelectronics]
|
Part No. |
STGW39NC60VD GW39NC60VD
|
OCR Text |
to-247 Very Fast PowerMESHTM IGBT
TARGET SPECIFICATION
Table 1: General Features
TYPE STGW39NC60VD
Figure 1: Package
IC @100C 40 A
VCES VCE(sat) (Max) @25C 600V < 2.5 V
HIGH CURRENT CAPABILITY HIGH FREQUENCY OPER... |
Description |
N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH IGBT N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH⑩ IGBT
|
File Size |
116.09K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
Part No. |
STW8NA80 STH8NA80FI
|
OCR Text |
...ical rds(0n) = 1.3 q + 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances ...247 isowatt218 internal schematic diagram q(2) symbol vds vdgr vgs id id idm(') plot v,so tstg t, pa... |
Description |
N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
File Size |
130.14K /
3 Page |
View
it Online |
Download Datasheet |
For
to-247 isowatt218 Found Datasheets File :: 59 Search Time::1.906ms Page :: | 1 | 2 | 3 | 4 | 5 | <6> | |
▲Up To
Search▲ |
|
Price and Availability
|