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vgd Datasheet PDF File

For vgd Found Datasheets File :: 2898 Search Time::3.062ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-38143- ATF38143 ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
OCR Text	...imum Ratings[1] Symbol VDS VGS vgd IDS Pdiss Pin max TCH TSTG jc Parameter Drain - Source Voltage [2] Gate - Source Voltage Gate Drain Voltage Drain Current Total Power Dissipation [2] RF Input Power Channel Temperature Storage Temperature...
Description	DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12, Max Output Current(A): 1.25, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40C Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	152.59K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	PHP225
OCR Text	...-10 V; VDS = -15 V; ID = -2.3 A vgd = 0 to -10 V; VDD = -20 V; ID = -1 A; RL = 20 VGS = -10 to 0 V; VDD = -20 V; ID = -1 A; RL = 20 vgd = 0; IS = -1.25 A IS = -1.25 A; di/dt = 100 A/s -30 -1 - - -2.3 -1 - - 1 - - - - - - - - - - - - 0.33 ...
Description	Dual P-channel enhancement mode MOS transistor
File Size	119.73K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHC20306
OCR Text	... 80 C - - 8.2 -5.6 A A 1 -1 - - vgd = 0; IS = 1.25 A vgd = 0; IS = -1.25 A open drain - - - 1 -1.3 20 V V V V V V - - 30 -30 V V PARAMETER CONDITIONS MIN. MAX. UNIT Philips Semiconductors Objective specification Complementary enhan...
Description	Complementary enhancement mode MOS transistor 8200 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
File Size	50.57K / 8 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors]
Part No.	PHC21025
OCR Text	...-1.25 A; di/dt = 100 A/s - - 35 vgd = 0; IS = 1.25 A vgd = 0; IS = -1.25 A - - - - VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; RL = 20 VGS = -10 to 0 V; VDD = -20 V; ID = -1 A; RL = 20 - - 25 50 VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; RL = 20 ...
Description	Complementary enhancement mode MOS transistors
File Size	161.68K / 16 Page	View it Online	Download Datasheet

				Magnet-Schultz of America, Inc. Calogic LLC CALOGIC[Calogic, LLC]
Part No.	SD5001 SD5401 SD5402 SD5402CY SD5400CY SD5000N XSD5000 XSD5001 XSD5002 XSD5400 XSD5401 XSD5402 SD5002 SD5400 SD5000 SD5001N SD5002N SD5401CY
OCR Text	...25 V VGS = VBS = -5V, ID = 10nA vgd = VBD = -5V, IS = 10nA VGB = 0V, ID = 10nA Source Open VGB = 0V, IS = 10A, Drain Open Leakage Current - SD5000/SD5400 IDS(OFF) ISD(OFF) IGBS Drain-Source Source-Drain Gate 1.0 1.0 10.0 10.0 1.0 nA nA A...
Description	30.5mm Hole Pushbutton Enclosure; NEMA Type:12, 13; Enclosure Material:Steel; Enclosure Color:Gray; No. of Contacts:5 RoHS Compliant: Yes 50 mA, 15 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET High-Speed DMOS Quad FET Analog Switch Arrays 50 mA, 20 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	37.48K / 3 Page	View it Online	Download Datasheet

				Unitrode
Part No.	UCC2941-3 UCC2941-5
OCR Text	...OUT +0.5V VIN SW 3 8V vgd 8 0.4 UCC3941-3 = 3.3V UCC3941-5 = 5.0V UCC3941-ADJ = 1.30V TO 6V VOUT 2 10F STARTUP CIRCUITRY 0.25 1 100F PLIM SD 5 4 OPEN=SD *SGND/FB - + UCC3941-ADJ 1.25V ...
Description	(UCCx941-x) 1V Synchronous Boost Converter
File Size	213.66K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM90EZ-H TM90EZ-M TM90RZ-H TM90RZ-M
OCR Text	...ol IRRM IDRM VTM, VFM dv/dt VGT vgd IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger volt...
Description	HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
File Size	65.88K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM90EZ-24 TM90EZ-2H TM90RZ-24 TM90RZ-2H
OCR Text	...ol IRRM IDRM VTM, VFM dv/dt VGT vgd IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger volt...
Description	8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高压大功率常规使用绝缘型 HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
File Size	66.60K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	TM55EZ-H TM55EZ-M TM55RZ-H TM55RZ-M
OCR Text	...ol IRRM IDRM VTM, VFM dv/dt VGT vgd IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger volt...
Description	MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	66.14K / 5 Page	View it Online	Download Datasheet

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