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Microsemi, Corp. Microsemi Corporation
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Part No. |
APT26F120L APT26F120B2 APT26F120B209
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Description |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel FREDFET
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File Size |
113.66K /
4 Page |
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GHZTECH[GHz Technology]
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Part No. |
1214-30
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Description |
30 W, 28 V, 1200-1400 MHz common base transistor 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
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File Size |
338.39K /
3 Page |
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it Online |
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GHZTECH[GHz Technology]
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Part No. |
1214-55
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Description |
55 W, 28 V, 1200-1400 MHz common base transistor 55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
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File Size |
326.26K /
3 Page |
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it Online |
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Continental Device India Limited
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Part No. |
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J
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Description |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 29 - 273 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 29 - 44 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 40 - 59 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 54 - 80 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 72 - 108 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 97 - 146 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 132 - 198 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100a Ic, 182 - 273 hFE
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File Size |
85.83K /
3 Page |
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Central Semiconductor, Corp.
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Part No. |
NSP0100 NSP0203
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Description |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 100a I(C) | TO-258 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 100a I(C) | TO-258 晶体管|晶体管|进步党| 100V的五(巴西)总裁| 100a一(c)|58
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File Size |
49.64K /
1 Page |
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Price and Availability
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