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  1250 a 1200 v scr Datasheet PDF File

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    APT26F120L APT26F120B2 APT26F120B209

Microsemi, Corp.
Microsemi Corporation
Part No. aPT26F120L aPT26F120B2 aPT26F120B209
Description Power FREDFET; Package: TO-264 [L]; ID (a): 27; RDS(on) (Ohms): 0.58; BvDSS (v): 1200; 27 a, 1200 v, 0.58 ohm, N-CHaNNEL, Si, POWER, MOSFET, TO-264aa
Power FREDFET; Package: T-MaX&amp;#153;; ID (a): 27; RDS(on) (Ohms): 0.58; BvDSS (v): 1200; 27 a, 1200 v, 0.58 ohm, N-CHaNNEL, Si, POWER, MOSFET
N-Channel FREDFET

File Size 113.66K  /  4 Page

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    GHZTECH[GHz Technology]
Part No. 1214-30
Description 30 W, 28 v, 1200-1400 MHz common base transistor
30 Watts, 28 volts, Pulsed Radar 1200 - 1400 MHz
BJT

File Size 338.39K  /  3 Page

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    GHZTECH[GHz Technology]
Part No. 1214-55
Description 55 W, 28 v, 1200-1400 MHz common base transistor
55 Watts - 28 volts, Pulsed Radar 1200 - 1400 MHz
BJT

File Size 326.26K  /  3 Page

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    KS621240

Powerex, Inc.
Powerex Power Semiconductors
Part No. KS621240
Description Single Darlington Transistor Module 400 amperes/1200 volts 400 a, 1200 v, NPN, Si, POWER TRaNSISTOR

File Size 404.09K  /  4 Page

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    VPP16-1250

TRIaD MaGNETICS
Part No. vPP16-1250
Description vPP16-1250

File Size 43.23K  /  1 Page

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    VPP24-1250

TRIaD MaGNETICS
Part No. vPP24-1250
Description vPP24-1250

File Size 42.70K  /  1 Page

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    P5-G11L82 P5-G62L82 P5-G41L82 P5-G06L82 P5-G23L82 P5-G04L82 P5-G17L82

NXP Semiconductors N.v.
Glenair, Inc.
Part No. P5-G11L82 P5-G62L82 P5-G41L82 P5-G06L82 P5-G23L82 P5-G04L82 P5-G17L82
Description GEaRBOX 15000:1 RaTIO
UNTERSETZUNGSGETRIEBE 1250 1 UNTERSETZUNGSGETRIEBE 1250 1
UNTERSETZUNGSGETRIEBE 25 1 UNTERSETZUNGSGETRIEBE 25 1
GEaRBOX 25:2 RaTIO 变速箱25:2比率
UNTERSETZUNGSGETRIEBE 125 1 UNTERSETZUNGSGETRIEBE 125 1
UNTERSETZUNGSGETRIEBE 25 3

File Size 112.66K  /  2 Page

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    APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG

Microsemi, Corp.
Microsemi Corporation
Part No. aPT25GN120B aPT25GN120BG aPT25GN120S aPT25GN120SG
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; Bv(CES) (v): 1200; vCE(sat) (v): 1.7; IC (a): 33; 67 a, 1200 v, N-CHaNNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies

File Size 145.42K  /  6 Page

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    TA0824A

TaI-SaW TECHNOLOGY CO., LTD.
Part No. Ta0824a
Description SaW Filter 1250 MHz

File Size 360.01K  /  8 Page

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Part No. T588N08TOF
Description 1250 a, 800 v, scr

File Size 240.54K  /  7 Page

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