30-c13 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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30-c13 Datasheet PDF File

For 30-c13 Found Datasheets File :: 4309 Search Time::4.172ms
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				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6V2300NR1 MRF6V2300NBR1
OCR Text	...sfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Inpu...C13 DUT Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.352 1.567 0.857 0.276 0.434 0.298 x 0.082 x 0.082 x 0.08...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	512.81K / 14 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6V2010NR1 MRF6V2010NBR1
OCR Text	... 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain -- 23.9 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 50 V...C13 C14 B2 + C15 C16 VSUPPLY Z5 Z6 Z7 Z8 Z9 Z10 C18 Z11 Z1 Z2 Z3 Z4 Z5 Z6...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
File Size	583.08K / 15 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...VDD = 26 Vdc IDQ = 800 mA 2.00 -30 -35 2.05 G ps, POWER GAIN (dB) 16 15 14 Gps 13 12 11 10 1 h VDD = 26 Vdc IDQ = 800 mA f = 1.96 GHz 60 50 40 30 20 10 0 100 30 W 12.5 80 W 12 30 W 11.5 80 W 11 1.85 1.90 1.95 f, FREQUENCY ...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF275G MRF275
OCR Text	...h at all Phase Angles with VSWR 30:1 * Overall Lower Capacitance @ 28 V Ciss -- 135 pF Coss -- 140 pF Crss -- 17 pF * Simplified AVC, ALC an...C13 B1 B2 C1, C2, C3, C4, C10, C11, C12, C13 C5, C8 C6 C7 C9 C14, C15, C16, C20, C21, C22 C17, C1...
Description	150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
File Size	224.47K / 12 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF275 MRF275L
OCR Text	...ATTS) 140 100 90 80 70 60 50 40 30 20 10 0 -10 -8 VDS = 28 V IDQ = 100 mA Pin = Constant f = 500 MHz -6 -4 -2 0 VGS, GATE-SOURCE VOLTAGE (VO...C13 C14 +v BIAS C9 .01 mf RF INPUT GND R2 L2 R1 Z2 C1 L1 Z1 C2 C3 C4 DUT Z3 C8 RF OUTPUT C5...
Description	N-CHANNEL BROADBAND RF POWER FET
File Size	265.53K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045NR109
OCR Text	... capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 0.9 pf functional tests (in freescale test fixture, 50 ohm sys...c13 c7 rf output rf input r1 z1 z2 z3 z4 z5 z6 z13 z8 z7 z12 z11 z9 + dut r3 c11 z10 c12 c15 c14 tab...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	620.42K / 16 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S9160HSR3 MRF6S9160HR3
OCR Text	... -- 20.9 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 46.8 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Perfor...C13 C14 C15 Z9 Z10 C9 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C2 Z19 B1 R2 + R1 C20 C21 L2 RF OUTPUT C22 C23...
Description	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
File Size	532.81K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S9130HSR3 MRF6S9130HR3
OCR Text	... -- 19.2 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 48.1 dBc in 30 kHz Bandwidth GSM Application * Typical GSM Performance: VDD...C13 C12 Z17 Z1 C1 Z2 Z3 C2 Z1 Z2 Z3 Z4 Z5 Z6, Z11 C3 C4 Z7 Z8 Z9 Z10 Z12 Z13 C5...
Description	RF Power Field Effect Transistors
File Size	467.46K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
OCR Text	...@ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 6...C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19 + C20 + C21 + C22 VSUPPLY C23 Z15 Z16 ...
Description	RF Power Field Effect Transistors
File Size	480.38K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G20-45 BLF6G20S-45
OCR Text	...e v ds =28v;i d = 300 ma 1.70 2.30 2.79 v i dss drain leakage current v gs =0v; v ds =28v - - 1.5 m a i dsx drain cut-off current v gs =v gs...c13 c14 v dd v gg c3 c4 c5 c6 c1 c7 c12 c11 c10 c9 c8 c16 c2 r1 c15 output 50 w input 50 w blf6g...
Description	Power LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G20-45<SOT608A (CDFM2)\|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;BLF6G20-45<SOT608A (CDFM2)\|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
File Size	74.41K / 12 Page	View it Online	Download Datasheet

For 30-c13 Found Datasheets File :: 4309 Search Time::4.172ms
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