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  60v.10 Datasheet PDF File

For 60v.10 Found Datasheets File :: 11077    Search Time::1.703ms    
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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ...T ton tstg tf Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -6V, IC = 0 IC = -30mA, IB = 0 ...10 -1.8 -1.2 V V MHz s s s 250 min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current ...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE =...10 1.8 1.2 V V MHz s s s 250 min typ max 100 100 100 100 100 Unit A A A V Forward current transfe...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...) fT ton toff Conditions VCB = -60V, IB = 0 VCB = -80V, IB = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VC...10 TC=100C -3 -1 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) Collector curre...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...ton toff * Conditions VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4...10 3 1 25C 100C 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C VCE(sat) -- IC Collector power dissipation...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SJ339

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SJ339
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-15A ID=-15A, VGS=-10V ID=-15A, VGS=-4V -1.0 15 25 30 40 40 55 Conditions Ratings min -60 20 -100 10 -2.0 typ max Unit V V A A V S m m Continued on ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.40K  /  4 Page

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    2SJ340

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ340
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-15A ID=-15A, VGS=-10V ID=-15A, VGS=-4V VDS=-20V, f...10 -2.0 typ max Unit V V A A V S m m pF pF pF ns ns ns ns V Marking:J304 Switching Time Test C...
Description Ultrahigh-Speed Switching Applications 超高速开关应

File Size 40.73K  /  4 Page

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    2SJ413

SANYO[Sanyo Semicon Device]
Part No. 2SJ413
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-25A ID=-25A, VGS=-10V ID=-25A, VGS=-4V -1.0 27 45 15 20 20 30 Conditions Ratings min -60 20 -100 10 -2.0 typ max Unit V V A A V S m m Marking : JE ...
Description Ultrahigh-Speed Switching Applications

File Size 78.32K  /  4 Page

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    2SJ425

SANKEN[Sanken electric]
Part No. 2SJ425
OCR Text ... 46 -250 -4.0 VDS = -60V, VGS = 0V VDS = -10V, I D = -250A VDS = -10V, ID = -4.0A VGS = -10V, ID = -4.0A VDS = -25V, f = 1.0MHz, ...10 0 s 1m Ta -- PD Characteristics 30 I -6 - 5V -4 -10 ID max -5 10 DC OP m ...
Description MOSFET

File Size 33.23K  /  1 Page

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    2SJ475-01

FUJI[Fuji Electric]
Part No. 2SJ475-01
OCR Text ...ductance P-channel MOS-FET -60V 0,06 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Am...10 Tch=25C L=100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. -60 -1,0 ...
Description FAP-III Series

File Size 296.96K  /  2 Page

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    2SJ485 2SJ485TP-FA

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ485 2SJ485TP-FA
OCR Text ...off) tf VSD ID=-1mA, VGS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-2A ID=-2A, VGS=-10V ID=-2A, VGS=-4V VDS=-20V, f=1M...10 -1.0 2.4 3.8 250 350 370 120 25 10 45 170 110 -1.0 -1.2 330 480 -2.5 typ max Unit V A A V S m m p...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 42.21K  /  4 Page

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