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  apt Datasheet PDF File

For apt Found Datasheets File :: 1979    Search Time::1.156ms    
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    APT50M38JLL

Advanced Power Technology
Part No. apt50M38JLL
OCR Text apt50M38JLL 500V 91A 0.038 W S G D S POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by signifi...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. apt50M50JFLL apt5014 apt5014BFLL apt5014SFLL
OCR Text apt50M50JFLL 500V 71A S G D 0.050W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power M...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. apt50M50JLC apt5010JLC
OCR Text apt50M50JLC 500V 77A 0.050 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. apt50M50JVFR
OCR Text apt50M50JVFR 500V 77A 0.050 S G D S POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. apt50M50JVR
OCR Text apt50M50JVR 500V 77A 0.050 S G D S POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the o...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. apt50M50L2FLL
OCR Text apt50M50L2FLL 500V 89A 0.050W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power M...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. apt50M50L2LL
OCR Text apt50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lo...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 50.41K  /  2 Page

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Part No. apt1101RSFLL
OCR Text ... procedures should be followed. apt website - http://www.advancedpower.com to-247 usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: ...
Description Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)

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    OPR280014

OPTEK Technologies
Part No. OPR280014
OCR Text ...max units test conditions e e (apt) apertured radiant incidence 0.2 - - mw/cm 2 i f = 20 ma (3) v f forward voltage - - 1.50 v i f = 50 ma i r reverse current - - 100 a v r = 2.0 v p wavelength at peak emission 87...
Description Infrared Light Emitting Diode

File Size 207.75K  /  2 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. apt50M60L2VFR
OCR Text apt50M60L2VFR 500V 77A 0.060W POWER MOS V (R) FREDFET TO-264 Max Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing densit...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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For apt Found Datasheets File :: 1979    Search Time::1.156ms    
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