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hitachi
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| Part No. |
HSB124S-J
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| OCR Text |
...erse current.(I R = 0.01Amax) * CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information...4 100 125 -55 to +125
Unit V V mA A mA C C
I FSM I O*1 Tj
Tstg
Notes: 1. Two device tota... |
| Description |
From old datasheet system
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| File Size |
18.43K /
4 Page |
 View
it Online |
Download Datasheet
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hitachi
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| Part No. |
BB305C
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| OCR Text |
.... * Provide mini mold packages; cmpak-4 (SOT-343mod)
Outline
Note: 1. Marking is "EW-". 2. BB305C is individual type number of HITACHI BBFET.
BB305C
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate1 to source... |
| Description |
From old datasheet system
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| File Size |
79.79K /
12 Page |
View
it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB302C
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| OCR Text |
.... * Provide mini mold packages; cmpak-4(SOT-343mod)
Outline
cmpak-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
* Note 1 Marking is "BW-". * Note 2 BB302C is individual type number of HITACHI BBFET.
BB302C
Absolute Maximum... |
| Description |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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| File Size |
57.12K /
11 Page |
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it Online |
Download Datasheet |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
BB304C
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| OCR Text |
.... * Provide mini mold packages; cmpak-4(SOT-343mod)
Outline
cmpak-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Notes: 1 Marking is "DW-". 2. BB304C is individual type number of HITACHI BBFET.
BB304C
Absolute Maximum Ratin... |
| Description |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
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| File Size |
66.64K /
12 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HRB0103A
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| OCR Text |
...h effifiency forward current. * CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information...4 -3 -2
10
Pulse test
Forward current I F (A)
Reverse current I R (A)
10 10
-5
... |
| Description |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
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| File Size |
33.53K /
6 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HRB0103B
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| OCR Text |
...h effifiency forward current. * CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information...4 -3 -2
10
Pulse test
Forward current I F (A)
Reverse current I R (A)
10 10
-5
... |
| Description |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
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| File Size |
33.84K /
6 Page |
View
it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
RENESAS[Renesas Electronics Corporation]
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| Part No. |
J205249HD74LV1G00A HD74LV1G00A
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| OCR Text |
...A
* HD74LV1G00A
L
1
CMPAK-5
= ( or )
* HD74LV1G00A
L
1
VSON-5
=
2
HD74LV1G00A
Inputs A L L H H H : Hi...4
OUT Y
(
)
3
HD74LV1G00A
*1 *1, 2
VCC VI VO IIK IOK IO ICC or IGND PT Tstg ,
... |
| Description |
HD74LV1G00A
2?input NAND Gate
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| File Size |
235.95K /
11 Page |
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it Online |
Download Datasheet |
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