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For e.h.t Found Datasheets File :: 163891    Search Time::2.187ms    
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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...an) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...ax tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 12 VCE...h F E 5 j - a( C/W) hFE - IC Characteristics (Typical) t on*t s tg *t f ( s) t on* t stg...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ...an) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...an) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SD1010

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...E -- IC 250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 200 1200 Ta=75C 900 25C -25C 600 150 100 300 50 0.3 1 3 10 30 100 ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ... Max 5mA EBO EB DC Current Gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 ...t) [C/W] 0.1 10-2 10-1 100 101 Time t [s, ms] 2SD1022 8 10ms 1ms Forward Bi...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5...t) [C/W] 0.1 10-2 10-1 100 Time t [s, ms] 2SD1023 8 10ms DC 1ms Forward Bias S...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5...t) [C/W] 0.1 10-2 10-1 100 101 Time t [s, ms] 2SD1024 12 10 10ms DC Forward...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5...t) [C/W] 0.1 10-2 10-1 100 Time t [s, ms] 2SD1025 12 10 10ms DC 1ms Forward Bi...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1030

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1030
OCR Text ...E -- IC 250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 200 1200 Ta=75C 900 25C -25C 600 150 100 300 50 0.3 1 3 10 30 100 ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

File Size 36.07K  /  2 Page

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