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IRF[International Rectifier]
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| Part No. |
IRVR101
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| OCR Text |
...d Response Control Programmable field Excitation Full Diagnostic Capability Self Excitation Short Circuit Protected EMI and ESD Immunity field Excitation, Temperature, and Fault Status Feedback < 200uA Standby Current
Voltage Sense B+ RO... |
| Description |
LIN Controlled Alternator Voltage Regulator
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| File Size |
106.96K /
15 Page |
 View
it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7A803609A K7A801809A
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| OCR Text |
...ficant bits(LSB) of the address field and set the internal burst counter if burst is desired. 2. The pin 42 is reserved for address bit for the 16Mb .
-3-
A16
50
DQPc DQc0 DQc1 VDDQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ VDDQ DQc6 DQc7 N... |
| Description |
256Kx36 & 512Kx18 Synchronous SRAM
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| File Size |
363.62K /
20 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7B803625M K7B801825M
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| OCR Text |
...ficant bits(LSB) of the address field and set the internal burst counter if burst is desired. 2. The pin 42 is reserved for address bit for the 16Mb .
A16
50
DQPc DQc0 DQc1 VDDQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ VDDQ DQc6 DQc7 N.C. VDD... |
| Description |
256Kx36 & 512Kx18 Synchronous SRAM
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| File Size |
570.25K /
21 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7N163601M K7N161801M
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| OCR Text |
...ficant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-3-
A16
50
DQPc DQc0 DQc1 VDDQ VSSQ DQc2 DQc3 DQc4 DQc5 VSSQ VDDQ DQc6 DQc7 VDD VDD VDD VSS DQd0 DQd1 VDDQ VSSQ DQd2 DQd3 DQd4 DQd5 VS... |
| Description |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
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| File Size |
314.12K /
20 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KC73125UBA
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| OCR Text |
...tosensors. This chip features a field integration read out system and an electronic shutter with variable charge storage time.
16Pin Cer DIP
FEATURES
* * * * * * * * High Sensitivity Optical Size 1/3 inch Format Variable Speed Electr... |
| Description |
1/3 INCH CCD IMAGE SENSOR FOR EIA CAMERA
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| File Size |
222.88K /
18 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KC73129UBA
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| OCR Text |
...tosensors. This chip features a field integration read out system and an electronic shutter with variable charge storage time.
16Pin Cer DIP
FEATURES
* * * * * * * * High Sensitivity Optical Size 1/3 inch Format Variable Speed Electr... |
| Description |
1/3 INCH CCD IMAGE SENSOR FOR CCIR CAMERA
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| File Size |
224.94K /
18 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KC73129UCA
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| OCR Text |
...ro lenses. This chip features a field integration read out system and an electronic shutter with variable charge storage time.
16Pin Cer DIP
FEATURES
* * * * * * * * Optical Size 1/3 inch Format Ye, Cy, Mg, G On-chip Comple-mentary M... |
| Description |
1/3 INCH CCD IMAGE SENSOR FOR PAL CAMERA
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| File Size |
247.72K /
20 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
KC74125B
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| OCR Text |
...tosensors. This chip features a field integration read out system and an electronic shutter with variable charge storage time.
14Pin Cer DIP
FEATURES
* * * * * * * * * High Sensitivity Optical Size 1/4 inch Format No adjust Substrate... |
| Description |
1/4 INCH CCD IMAGE SENSOR FOR EIA CAMERA
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| File Size |
229.70K /
18 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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