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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFR180N06
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| OCR Text |
... R s s s s ^ ^ ^ ^ ag g sLae
isoplus 247TM E153432
feca~iEC= A~AaeaCEG
d=Z=d~iE p=Z=pcieAE
a=Z=ae~aa
G=m~iEai=eEaCaaO
RSM JRR=KKK=HNRM NRM JRR=KKK=HNRM PMM ORMM R
t su =O
Features paaaAca=AUae=ca=aaeEAiJceeEeJ_ca... |
| Description |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
81.69K /
2 Page |
 View
it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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| Part No. |
IXFR50N50 IXFR55N50
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| OCR Text |
...A A mJ J V/ns W C C C C V~ g
isoplus 247TM
G
D
Isolated back surface*
G = Gate S = Source
D = Drain
* Patent pending
Features
l
l l l l
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs isoplus247-TM
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| File Size |
75.18K /
2 Page |
View
it Online |
Download Datasheet |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
FMM200-0075P
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| OCR Text |
isoplus i4-PACTM with DAB Base
3 5 4
ID25 = 200 A VDSS = 75 V RDSon = 3.5 m
T1
1
1 2
T2
5
MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C (diode) TC = 25C (diode) TC = 90C Conditions TVJ = 25C to TVJmax... |
| Description |
Trench Power MOSFET 200 A, 75 V, 0.0045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
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| File Size |
33.88K /
2 Page |
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it Online |
Download Datasheet |
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IXYS
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| Part No. |
IXFE180N10
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| OCR Text |
...00 V V V V A A A A mJ J V/ns
isoplus 227TM (IXFE)
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features W C C C C V~ V~
*Conforms to SOT-227B outline *En... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFET
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| File Size |
70.21K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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