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For methodology Found Datasheets File :: 1655    Search Time::1.281ms    
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    AFT05MS003N

NXP Semiconductors
Part No. AFT05MS003N
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 1c, passes 1000 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitiv...
Description High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

File Size 1,220.52K  /  20 Page

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    AFT05MP075GNR1 AFT05MP075NR1

NXP Semiconductors
Part No. AFT05MP075GNR1 AFT05MP075NR1
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 250 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivi...
Description High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

File Size 1,052.52K  /  21 Page

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    MRF7S19120NR109

Freescale Semiconductor, Inc
Part No. MRF7S19120NR109
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007, 2009. All rights reserved. MRF7S19120NR1 ...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 510.29K  /  14 Page

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    MRF085H

NXP Semiconductors
Part No. MRF085H
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2000 v charge device model (per jesd22--c101) c2, passes 500 v table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characte...
Description RF Power LDMOS Transistor

File Size 363.45K  /  11 Page

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    MW7IC2040GNR1 MW7IC2040NBR1 MW7IC2040NR1

Freescale Semiconductor, Inc
Part No. MW7IC2040GNR1 MW7IC2040NBR1 MW7IC2040NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Lev...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 921.96K  /  29 Page

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    Freescale Semiconductor
Part No. MD7IC18120GNR1 MD7IC18120NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 638.72K  /  18 Page

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    MW7IC008NT1

Freescale Semiconductor, Inc
Part No. MW7IC008NT1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Lev...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 286.50K  /  13 Page

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    MW7IC008NT1 MW7IC008NT111

Freescale Semiconductor, Inc
Part No. MW7IC008NT1 MW7IC008NT111
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level ...
Description RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc

File Size 421.23K  /  13 Page

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    27271SL

Freescale Semiconductor, Inc
Part No. 27271SL
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6S9045NR1 1 R...
Description RF Power Field Effect Transistor

File Size 567.28K  /  15 Page

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For methodology Found Datasheets File :: 1655    Search Time::1.281ms    
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