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  swithing Datasheet PDF File

For swithing Found Datasheets File :: 263    Search Time::1.375ms    
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    Renesas
Part No. RJP60F5DPM
OCR Text ...ristics (t ypical) (4) eoff eon swithing energy losses e (j) switch ing times t (n s) 11 0 2 0 0 100 10 1000 100 100000 10000 swithing energy losses e (j) collector current i c (a) (inductive load) eoff eon switching chara...
Description N-Channel IGBT

File Size 136.70K  /  7 Page

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    RJH60D5DPK10

Renesas Electronics Corporation
Part No. RJH60D5DPK10
OCR Text ...= 15 v i c = 37 a, t a = 25 c swithing energy losses e (j) switching ti mes t (ns) 1 10 200100 10 1000 100 100000 10000 v cc = 300 v, v ge = 15 v rg = 5 , ta = 25 c swithing energy losses e (j) 1 10 200100 collector current ...
Description Silicon N Channel IGBT Application: Inverter

File Size 79.07K  /  8 Page

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    RJH60D3DPE10

Renesas Electronics Corporation
Part No. RJH60D3DPE10
OCR Text ...nce rg () (inductive load) swithing energy losses e (j) switching ti mes t (ns) swithing energy losses e (j) collector current i c (a) (inductive load) switching characteristics ( typical) (1) switching characteristics ...
Description Silicon N Channel IGBT Application: Inverter

File Size 77.10K  /  8 Page

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    RJH60D3DPP-M0

Renesas Electronics Corporation
Part No. RJH60D3DPP-M0
OCR Text ...nce rg () (inductive load) swithing energy losses e () switching ti mes t (ns) swithing energy losses e () collector current i c (a) (inductive load) switching characteristics ( typical) (1) switching characteristics (...
Description Silicon N Channel IGBT Application: Inverter

File Size 77.75K  /  8 Page

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    RJH60D1DPP-M010

Renesas Electronics Corporation
Part No. RJH60D1DPP-M010
OCR Text ...() (inductive load) eoff eon swithing energy losses e () switching ti mes t (ns) switching characteristics ( typical) (3) switching characteristics ( typical) (4) v cc = 300 v, v ge = 15 v rg = 5 a = 25 c 10000 1000 100 10 sw...
Description Silicon N Channel IGBT Application: Inverter

File Size 78.87K  /  8 Page

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    Renesas Technology
Part No. RJP60D0DPP-M0
OCR Text ... test i c = 22 a 45 a 1 10 100 swithing energy losses e (j) collector current i c (a) (inductive load) 1 100 10 1000 switching caracteristics (t ypical) (1) switching caracteristics (t ypical) (2) collector current i c (a) ...
Description Silicon N Channel IGBT

File Size 91.49K  /  7 Page

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    RJH60F7DPQ-A0 RJH60F7DPQ-A0-T0

Renesas Electronics Corporation
Part No. RJH60F7DPQ-A0 RJH60F7DPQ-A0-T0
OCR Text ...eristics (typical) (4) eoff eon swithing energy losses e ( j) switching times t (ns) 110 200 100 110 200 100 10 1000 100 100000 10000 swithing energy losses e ( j) collector current i c (a) (inductive load) eoff eon swit...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 100.70K  /  8 Page

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    RJH60F6DPQ-A0 RJH60F6DPQ-A0-T0

Renesas Electronics Corporation
Part No. RJH60F6DPQ-A0 RJH60F6DPQ-A0-T0
OCR Text ...00 100 10 1000 100 100000 10000 swithing energy losses e ( j) 1 collector current i c (a) (inductive load) eoff eon switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (in...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 101.91K  /  8 Page

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    RJH60F4DPQ-A0 RJH60F4DPQ-A0-T0

Renesas Electronics Corporation
Part No. RJH60F4DPQ-A0 RJH60F4DPQ-A0-T0
OCR Text ...eristics (typical) (4) eoff eon swithing energy losses e ( j) switching times t (ns) 110 200 100 10 1000 100 100000 10000 swithing energy losses e ( j) 110100 collector current i c (a) (inductive load) eoff eon switching c...
Description Silicon N Channel IGBT High Speed Power Switching

File Size 101.91K  /  8 Page

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For swithing Found Datasheets File :: 263    Search Time::1.375ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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