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00159 22101 STA55 USM106 X7R1C HA2620 BCP040C 8848ZE
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  time-delay Datasheet PDF File

For time-delay Found Datasheets File :: 119561    Search Time::2.062ms    
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    7MBP150RA060

Fuji Electric
Part No. 7MBP150RA060
OCR Text ...B Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM IGBT-IPM Symbol Condition Min. Typ. Max. Iccp 3 1...
Description IGBT-IPM R Series

File Size 1,244.37K  /  8 Page

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    5S0765C

Fairchild Semiconductor
Part No. 5S0765C
OCR Text ...nsfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5S0965 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current St...
Description Search --To LA5S0765C

File Size 255.94K  /  16 Page

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    4AM17

Hitachi Semiconductor
Part No. 4AM17
OCR Text ...series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Cis...
Description Silicon N/P-Channel/P-Channel Power MOS FET Array

File Size 59.24K  /  7 Page

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    2N120CND

Intersil Corporation
Part No. 2N120CND
OCR Text ...g SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Therm...Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off E...
Description Search --To HGTP2N120CND

File Size 126.74K  /  7 Page

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    28C16B

STMicroelectronics
Part No. 28C16B
OCR Text ...MINARY DATA s s Fast Access Time: 90 ns at VCC=5V Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ...delay, tWLQ5H, that cannot be shorter than the value specified in Table 10A, the internal write cycl...
Description Search --To M28C16B

File Size 128.44K  /  17 Page

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    J112 J111

ON Semiconductor
Part No. J112 J111
OCR Text ...CS 1000 t d(on), TURN-ON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD J111 J112 J113 TJ = 25C VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t r , RISE TIME (n...
Description (J111 / J112) JFET Chopper Transistors N-Channel

File Size 108.35K  /  5 Page

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    K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D
OCR Text ...ivated during row address latch time. Selects bank for read/write during column address latch time. Latches row addresses on the positive go...delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to row prechar...
Description 1M x 16 SDRAM 100万16内存

File Size 685.66K  /  43 Page

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    OKI
Part No. M5412222A
OCR Text ... serial access Read/write cycle time 25 ns/30 ns Access time 23 ns/25 ns Direct cascading capability Write mask function (Input enable contr...delay devices. Write Reset : RSTW The first positive transition of SWCK after RSTW becomes high rese...
Description Search --To MSM5412222A

File Size 109.71K  /  13 Page

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For time-delay Found Datasheets File :: 119561    Search Time::2.062ms    
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