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  transistor. Datasheet PDF File

For transistor. Found Datasheets File :: 72715    Search Time::1.391ms    
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    LRC[Leshan Radio Company]
Part No. MMBTA70LT1
OCR Text Transistor PNP Silicon 3 COLLECTOR MMBTA70LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318-08, STYLE 6 Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V CEO EBO ...
Description General Purpose Transistor(PNP Silicon)

File Size 285.68K  /  5 Page

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    MOTOROLA[Motorola, Inc]
Part No. MMDF2N06VL
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 1 MMDF2N06VL ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ...
Description DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

File Size 114.88K  /  4 Page

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    MICROCHIP[Microchip Technology]
Part No. MCRF202-I_WQ99 MCRF202 MCRF202-I_P MCRF202-I_S MCRF202-I_SB MCRF202-I_SN MCRF202-I_W MCRF202-I_WB MCRF202-I_WF MCRF202-I_WFB
OCR Text ... tuned LC circuit. A modulation transistor is placed between the antenna coil pads (VA and VB). The transistor turns on and off based on the modulation signal. As a result, the amplitude of the antenna coil voltage varies with the modulatio...
Description The MCRF202 is a passive Radio Frequency Identification (RFID) IC device with an external sensor Input that provides an RF interface for reading the contents of a user memory array. The MCRF202 is specially designed to detect the logic sta
125 kHz Passive RFID Device with Sensor Input
From old datasheet system

File Size 245.97K  /  20 Page

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    MOTOROLA[Motorola, Inc]
Part No. MMDF2N06V
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 1 MMDF2N06V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, I...
Description DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

File Size 113.64K  /  4 Page

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    2SB621 2SB621A 2SB0621 2SB0621A

Panasonic Semiconductor
Part No. 2SB621 2SB621A 2SB0621 2SB0621A
OCR Text Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.00.2 Unit: mm 4.00.2 q q Low collector to emitter saturation voltage VCE(sat). High tr...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 46.34K  /  3 Page

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    MOTOROLA[Motorola, Inc]
Part No. MMDF3200Z
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 1 MMDF3200Z MAXIMUM RATINGS (TJ = 25C unless otherwise specified) When mounted on 1 inch square (25.40 mm square) FR-4 or G-10 board (VGS = 10 V @ 10 Seconds)...
Description DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

File Size 83.17K  /  4 Page

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    2SB642

PANASONIC[Panasonic Semiconductor]
Part No. 2SB642
OCR Text Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.90.1 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 High foward current transfer ratio hFE. M...
Description Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

File Size 49.24K  /  3 Page

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    MOTOROLA[Motorola, Inc]
Part No. MMDF3NO2HD MMDF3N02HDR2
OCR Text ... (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 1 MMDF3N02HD ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ...
Description TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR

File Size 176.09K  /  10 Page

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