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66A35 MC145010 B25667 1N4759A UF753 TTINY26 80240 2SK2207
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For values Found Datasheets File :: 157139    Search Time::1.562ms    
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    B82725J2602N020 B82725J2402N020 B82725J2103N022 B82725J2102N020 B82725J2202N020 B82725J2802N020 B82725J

EPCOS
Part No. B82725J2602N020 B82725J2402N020 B82725J2103N022 B82725J2102N020 B82725J2202N020 B82725J2802N020 B82725J
OCR Text ... at 10 kHz, 5 mA, 20 C, typical values Measured at 20 C, typical values, specified per winding Sn96.5Ag3.0Cu0.5: (245 5) C, (3 0.3) s Wetting of soldering area 95% (to IEC 60068-2-20, test Ta) (260 5) C, (10 1) s (to IEC 60068-2-20, test T...
Description Power line chokes

File Size 94.84K  /  6 Page

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    K4T51043QE

Samsung semiconductor
Part No. K4T51043QE
OCR Text ...itial Release - Revised the IDD values - Revised the IDD values - Added DDR2-800 CL6 - Added the detailed explanation on the notes for AC parameters - Corrected Typo - Added data setup and hold time derating values for single-end DQS - Corr...
Description 512Mb E-die DDR2 SDRAM Specification

File Size 937.89K  /  45 Page

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    IPP80N03S4L-04 IPB80N03S4L-03 IPI80N03S4L-04

Infineon Technologies AG
Part No. IPP80N03S4L-04 IPB80N03S4L-03 IPI80N03S4L-04
OCR Text ...0.01 2.2 1 A V 1.6 62 62 40 K/W values typ. max. Unit - 10 1000 - 5 1 3.9 3.6 3.0 2.7 60 100 5 4.7 3.6 3.3 nA m Rev. 2.0 page 2 2007-03-09 IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 Parameter Symbol Conditi...
Description OptiMOS-T2 Power-Transistor

File Size 186.07K  /  9 Page

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    IPP80N03S4L-03 IPB80N03S4L-02 IPI80N03S4L-03

Infineon Technologies AG
Part No. IPP80N03S4L-03 IPB80N03S4L-02 IPI80N03S4L-03
OCR Text ...0.01 2.2 1 A V 1.1 62 62 40 K/W values typ. max. Unit - 10 1000 - 5 1 2.8 2.5 2.3 2.0 60 100 3.2 2.9 2.7 2.4 nA m Rev. 2.0 page 2 2007-03-09 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Parameter Symbol Condi...
Description 80 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS-T2 Power-Transistor

File Size 185.83K  /  9 Page

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    IPD50N06S4-09

Infineon Technologies AG
Part No. IPD50N06S4-09
OCR Text ... Symbol Conditions min. values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 ...
Description OptiMOS-T2 Power-Transistor

File Size 162.26K  /  9 Page

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    74LV00 74LV00D 74LV00DB 74LV00N 74LV00PW 74LV00PWDH 74LV00_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74LV00 74LV00D 74LV00DB 74LV00N 74LV00PW 74LV00PWDH 74LV00_2
OCR Text ... A UNIT NOTE: 1. All typical values are measured at Tamb = 25C. AC CHARACTERISTICS GND = 0V; tr = tf 2.5ns; CL = 50pF; RL = 1K SYMBOL PARAMETER WAVEFORM CONDITION VCC(V) 1.2 2.0 tPHL/PLH Propagation delay nA, nB to nY Figures 1, 2...
Description From old datasheet system
Quad 2-input NAND gate

File Size 104.57K  /  10 Page

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    74LV573 74LV573D 74LV573DB 74LV573N 74LV573PW 74LV573PWDH 74LV573_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74LV573 74LV573D 74LV573DB 74LV573N 74LV573PW 74LV573PWDH 74LV573_2
OCR Text ...uts VOL NOTE: 1. All typical values are measured at Tamb = 25C. 1998 Jun 10 6 Philips Semiconductors Product specification Octal D-type transparent latch (3-State) 74LV573 AC CHARACTERISTICS GND = 0V; tr = tf 2.5...
Description From old datasheet system
Octal D-type transparent latch (3-State)
Octal D-type transparent latch 3-State

File Size 123.32K  /  14 Page

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    IPD30N06S4L-23

Infineon Technologies AG
Part No. IPD30N06S4L-23
OCR Text ... Symbol Conditions min. values typ. max. Unit Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 ...
Description OptiMOS-T2 Power-Transistor

File Size 161.13K  /  9 Page

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