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  30-c13 Datasheet PDF File

For 30-c13 Found Datasheets File :: 4216    Search Time::7.282ms    
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    AFT20P060-4N

Freescale Semiconductor, Inc
Part No. AFT20P060-4N
OCR Text ...n variation over temperature (--30 ? cto+85 ? c) ? g ? 0.012 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? ...c13 table 6. aft20p060--4nr3 test circuit compone nt designations and values ? 2110--2170 mhz part d...
Description RF Power LDMOS Transistor

File Size 427.13K  /  13 Page

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    BLF6G10-160RN BLF6G10LS-160RN

NXP Semiconductors N.V.
Part No. BLF6G10-160RN BLF6G10LS-160RN
OCR Text ... 32 V; f = 1 MHz Min 65 1.4 1.7 30.6 Typ 1.9 2.2 39 13.5 0.07 4.2 Max 2.4 2.7 5 450 Unit V V V A A nA S pF 7. Application information T...C13 C4 output 50 001aah480 Fig 6. Test circuit for operation at 900 MHz BLF6G10-1...
Description Power LDMOS transistor

File Size 142.85K  /  11 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
OCR Text ...@ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 6...C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19 + C20 + C21 + C22 VSUPPLY C23 Z15 Z16 ...
Description RF Power Field Effect Transistors

File Size 480.38K  /  16 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
OCR Text ... 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 6...C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19 + C20 + C21 + C22 VSUPPLY C23 Z15 Z16 ...
Description RF Power Field Effect Transistors

File Size 848.94K  /  20 Page

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    NXP Semiconductors N.V.
Part No. BLF4G10S-120
OCR Text ...z to 1000 mhz. [1] acpr 400 at 30 khz resolution bandwidth [2] acpr 600 at 30 khz resolution bandwidth 1.2 features n typical gsm edge per...c13 c12 c17 c18 c9 c8 c4 c10 q1 l9 l10 l3 l4 c16 c1 c3 c2 v dd rf out rf in 001aac408 xxxx xxxxxx...
Description UHF power LDMOS transistor

File Size 103.30K  /  14 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. MRF6S9060NR1 MRF6S9060NBR1
OCR Text ...750 kHz Offset -- - 47.6 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 2...C13 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.215 0.221 0.500 0.460 0.040 0.280 0.087 0.435 x 0.065 x 0.065...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 621.21K  /  16 Page

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    Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S9045NR1 MRF6S9045N MRF6S9045NBR1
OCR Text ...@ 750 kHz Offset -- - 47 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 1...C13 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530 Taper Microstrip Microstrip Mi...
Description RF Power Field Effect Transistors

File Size 623.99K  /  16 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S24140HSR3 MRF6S24140HR3
OCR Text ...sfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc...C13 C11 B2 C19 C20 C21 + C22 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 0.678 x 0.068 Microstrip 0.466 x 0.06...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 454.84K  /  9 Page

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For 30-c13 Found Datasheets File :: 4216    Search Time::7.282ms    
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