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960-1215 Datasheet PDF File

For 960-1215 Found Datasheets File :: 206 Search Time::1.796ms
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				Advanced Power Technology
Part No.	MS2211
OCR Text	...ICATIONS Features * * * * * 960-1215 MHz COMMON BASE GOLD METALLIZATION POUT = 6 W MIN. WITH 9.3 dB GAIN 5:1 VSWR CAPABILITY DESCRIPTION: : The MS2211 is a silicon NPN bipolar device designed For specialized avionics applications, i...
Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
File Size	176.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	MS2210
OCR Text	...UT Test Conditions Min. f = 960 - 1215 MHz PIN = 60 W f = 960 - 1215 MHz PIN = 60 W f = 960 - 1215 MHz PIN = 60 W Pulse Format: 10 S Duty Cycle: 10% Value Typ. 330 45 7.4 Max. ---------- Unit W % dB C GP Note: VCC =...
Description	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
File Size	96.83K / 3 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	SD1526-01
OCR Text	... * * * * * * GOLD METALLIZATION 960 - 1215 MHz POUT = 5.0 WATTS GP = 9.5 dB MINIMUM EMITTER BALLASTED INFINITE VSWR CAPABILITY @ RATED CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION: The SD1526-01 is a gold metallized, ...
Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
File Size	117.96K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology GHz Technology GHZTECH ETC List of Unclassifed Manufacturers
Part No.	JTDA50
OCR Text	960 - 1215 MHz GENERAL DESCRIPTION The JTDA 50 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for...
Description	RF Power Transistors: AVIONICS High power COMMON BASE bipolar transistor. 50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
File Size	24.35K / 1 Page	View it Online	Download Datasheet


Part No.	LB1211
OCR Text	...le power dissipation pd max 960 mw operating temperature topr -20 to +75 c storage temperature tstg -40 to +150 c monol...1215,1216 no.1042-2/5 electrical characteristics at ta = 25 c ratings parameter symbol co...
Description	200 mA, 35 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	70.32K / 5 Page	View it Online	Download Datasheet

				ASI
Part No.	MX0912B351Y
OCR Text	...TJ TSTG JC 20 V 65 V 3.0 V 21 A 960 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 0.18 C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERI...1215 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, ...
Description	Transistor
File Size	234.97K / 3 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	SD8250
OCR Text	... IC = 1.0 A POUT = 250 W f = 960 - 1215 MHz 10 8.0 38 200 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to chan...
Description	NPN SILICON RF POWER TRANSISTOR From old datasheet system
File Size	19.71K / 2 Page	View it Online	Download Datasheet

For 960-1215 Found Datasheets File :: 206 Search Time::1.796ms
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