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die-3 Datasheet PDF File

For die-3 Found Datasheets File :: 45302 Search Time::5.078ms
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				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS ...3 54 71 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 2...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	... from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --...3 V TJ = 25C, IS = 82A, VGS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T I...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	... from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --...3 V TJ = 25C, IS = 82A, VGS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T I...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...ackage capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any ...3.8 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	... from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and C...3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF4905 7...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...ackage capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any ...3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and C...3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...ackage capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any...3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	... load Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond ...3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typic...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Abso...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

For die-3 Found Datasheets File :: 45302 Search Time::5.078ms
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