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10AHE040 GP30G VIT3080S R16V2 0A331 SPX2700 SMDA05C TPSMA10A
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For methodology Found Datasheets File :: 1323    Search Time::2.328ms    
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    MMG3004NT1 MMG3004NT108

Freescale Semiconductor, Inc
Part No. MMG3004NT1 MMG3004NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3004NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 377.97K  /  21 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S18100NBR1
OCR Text ...to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s18100n rev. 1, 5/2006 freescale semiconductor technical data ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 703.35K  /  20 Page

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    MMG3003NT1 MMG3003NT108

Freescale Semiconductor, Inc
Part No. MMG3003NT1 MMG3003NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved. MMG3003NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 399.87K  /  18 Page

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    MMG3002NT1 MMG3002NT108

Freescale Semiconductor, Inc
Part No. MMG3002NT1 MMG3002NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved. MMG3002NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 330.00K  /  16 Page

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    MMG3001NT108 MMG3001NT1

Freescale Semiconductor...
Freescale Semiconductor, Inc
Part No. MMG3001NT108 MMG3001NT1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved. MMG3001NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 290.07K  /  15 Page

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    MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1

Freescale Semiconductor, Inc
Part No. MW7IC2725GNR1 MW7IC2725NBR1 MW7IC2725NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Leve...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 804.29K  /  24 Page

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    Freescale (Motorola)
Part No. MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1
OCR Text ...to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic char...
Description RF Power Field Effect Transistors

File Size 458.84K  /  16 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF6S9125NR1
OCR Text ...protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) c (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level t...
Description RF Power Field Effect Transistors 射频功率场效应晶体管

File Size 471.78K  /  16 Page

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    LSI, Corp.
Part No. CW001007
OCR Text ...nts of the lsi logic coreware a methodology and is implemented using lsi logic g11? 0.25-micron process technology. the g11-p 2.5 v core supports speeds up to 80 mhz. the g11-v 1.8 v core supports speeds up to 55 mhz (under worst case comme...
Description 32-Bit Microprocessor Core(32位微处理核芯) 32位微处理器内核(32位微处理核芯

File Size 95.85K  /  36 Page

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    MRF6S18060NBR1 MRF6S18060NR1

Freescale Semiconductor, Inc
Part No. MRF6S18060NBR1 MRF6S18060NR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S18060NR1 MRF6S1...
Description RF Power Field Effect Transistors

File Size 684.79K  /  20 Page

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For methodology Found Datasheets File :: 1323    Search Time::2.328ms    
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