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Sanyo
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Part No. |
2SA1824
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OCR Text |
...hFE1 hFE2 fT Cob VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)2V, IC=(-)4A VCE=(-)5V, IC=(-)1A VCB=(-)10V, f=1MHz 100* 35 (130) 180 (60)40 MHz MHz pF Conditions Ratings min typ max (-)1 (-)1 400* Unit A A
Any and all SA... |
Description |
PNP Epitaxial Planar Silicon Transistors 50V/5A Switching Applications PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
142.99K /
4 Page |
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Sanyo
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Part No. |
2SA1830
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OCR Text |
...E(sat) VBE(sat) VCB=(-)300V, IE=0 VEB=(-)4V, IC=0 VCE=(-)10V, IC=(-)100mA VCE=(-)10V, IC=(-)100mA VCB=(-)30V, f=1MHz IC=(-)500mA, IB=(-)50mA IC=(-)500mA, IB=(-)50mA 40* (40)60 (25)15 (-)1.0 (-)1.0 Conditions Ratings min typ max (-)1.0 (-)1.... |
Description |
PNPEpitaxial Planar Silicon Transistor High-Voltage Driver Applications PNP Epitaxial Planar Silicon Transistor
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File Size |
154.26K /
5 Page |
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it Online |
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hitachi
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Part No. |
2SA1960
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OCR Text |
...-- 60 1.3 14.5 2.9 Max -- -- -1.0 -10 -- -- 18 4.0 GHz pF pF Unit V V A A Test conditions I C = -100 A IE = 0 I C = -1 mA RBE = VCB = -60 V IE = 0 VEB = -3 V IC = 0 VCE = -5 V, IC = -50 mA Pulse test VCE = -10 V I C = -50 mA VEB = 0, IC = ... |
Description |
Silicon NPN Epitaxial From old datasheet system
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File Size |
35.60K /
6 Page |
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it Online |
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Sanyo
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Part No. |
2SA1963
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OCR Text |
...) | S2le |2 (2) NF VCB=-10V, IE=0 VEB=-1V, IC=0 VCE=-5V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz VCB=-10V, f=1MHz VCE=-5V, IC=-10mA, f=1GHz VCE=-2V, IC=-3mA, f=1GHz VCE=-5V, IC=-5mA, f=1GHz 7 20 * 3 5 0. 8 0.55 9 6.5 1.5 3.0 1.3 Conditi... |
Description |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications
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File Size |
158.40K /
5 Page |
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it Online |
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Sanyo Electric Co.,Ltd.
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Part No. |
2SA1965
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OCR Text |
... VCE(sat) VBE(sat) VCB=-12V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-5mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA 200 600 5.0 -16 -0.75 -35 -1.1 Conditions Ratings min typ max -0.1 -0.1 60 0 MHz pF mV V Unit A A
Mar... |
Description |
PNP Epitaxial Planar Silicon Transistor for Muting Circuit Applications(用于噪声抑制电路的PNP硅外延平面型晶体
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File Size |
83.89K /
3 Page |
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it Online |
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Sanyo
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Part No. |
2SA1967
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OCR Text |
...VCE(sat) VBE(sat) VCB=-900V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA VCE=-10V, IC=-1mA VCB=-100V, f=1MHz IC=-500A, IB=-100A IC=-500A, IB=-100A -900 -900 -7 20 6 2.2 -1 -1.5 Conditions Ratings min typ max -1 -1 50 MHz pF V V V V V Unit A A
V(... |
Description |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
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File Size |
89.42K /
3 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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Part No. |
2SA1968LS
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OCR Text |
...nit : mm 2079D
[2SA1968LS]
10.0 3.2 4.5 2.8
High breakdown voltage(VCEO min=-900V). Small Cob(Cob typ=2.2pF). High reliability(Adoption of HVP process). Package of full isolation type.
3.5 7.2 16.1 16.0
3.6
0.9
1.2
1.2
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Description |
Dynamic Focus Application Transistors PNP Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
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File Size |
30.19K /
3 Page |
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it Online |
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Sanyo
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Part No. |
2SA1969
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OCR Text |
... VCE(sat) VBE(sat) VCB=-10V, IE=0 VEB=-1V, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-400mA VCE=-5V, IC=-100mA VCB=-10V, f=1MHz VCB=-10V, f=1MHz IC=-200mA, IB=-20mA IC=-200mA, IB=-20mA 20 5 1.7 4.7 3. 9 -0.4 -0.9 -1.0 -1.2 7.0 GH z pF pF V V Condi... |
Description |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications PNP Epitaxial Planar Silicon Transistors
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File Size |
136.00K /
4 Page |
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it Online |
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hitachi
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Part No. |
2SB1025
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OCR Text |
...mina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer... |
Description |
Silicon PNP Epitaxial From old datasheet system
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File Size |
33.84K /
5 Page |
View
it Online |
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Price and Availability
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