104a pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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104a Datasheet PDF File

For 104a Found Datasheets File :: 22492 Search Time::1.64ms
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				SANYO[Sanyo Semicon Device]
Part No.	2SJ418
OCR Text	...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60100TS (KOTO) TA-2630 No.5298-1/4 2SJ418 Specificati...4A ID=-4A, VGS=-10V ID=-4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified...
Description	Ultrahigh-Speed Switching Applications
File Size	126.59K / 4 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SC3833
OCR Text	... ww scs .i UNIT 500 V 400 V 10 V 12 A 24 A 4 A .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collecto...4A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.3 V ...
Description	isc Silicon NPN Power Transistor
File Size	205.21K / 2 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ459
OCR Text	...gh-speed diode incorporated. 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 ...4A, VGS=0 IS=--4A, di / dt=100A / s --2.0 1.2 2.4 2.0 1500 230 80 35 50 300 80 -1.5 150 195 2.8 Rati...
Description	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	32.07K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ503 2SJ503TP-FA
OCR Text	...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2512 No.5932-1/4 2SJ503 Specificati...4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 4A I(D) \| TO-251VAR 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|51VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|52VAR P-Channel Silicon MOSFET DC/DC Converter Applications
File Size	86.59K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	... -- -- 0.17 0.24 5.0 400 220 75 10 40 75 65 -1.1 65 Max -- -- -10 10 -2.0 0.22 0.37 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF p...4A, VGS = -10V Note4 I D = -4A, VGS = -4V Note4 I D = -4A, VDS = -10V VDS = -10V VGS = 0 f = 1MHz VG...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP9922GEO-HF AP9922GEO-HF14 AP9922GEO-HF-14
OCR Text	...current v ds =20v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 100 ua i gss gate-source leakage v ...4a t a =25 : 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized...
Description	Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application
File Size	93.86K / 4 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	AP2305BGN-HF
OCR Text	...5v -3.4 pulsed drain current 1 -10 parameter drain-source voltage gate-source voltage continuous drain current 3 , @v gs =-4.5v ap2305bgn-hf...4a - 14 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage c...
Description	Advanced Power MOSFETs
File Size	105.24K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9576GM
OCR Text	... o c) v ds =-60v, v gs =0v - - -10 ua drain-source leakage current (t j =70 o c) v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =25v - - 100 na q g total gate charge 2 i d =-4a - 15 24 nc q gs gate-source charge v ds =-48v ...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	68.69K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ596 2SJ596TP-FA
OCR Text	...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3119 No.6979-1/4 2SJ596 Specifications...4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specif...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-252VAR P-Channel Silicon MOSFET DC / DC Converter Applications
File Size	29.85K / 4 Page	View it Online	Download Datasheet

For 104a Found Datasheets File :: 22492 Search Time::1.64ms
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