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Infineon Technologies A...
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Part No. |
PXAC182908FV PXAC182908FV-15
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OCR Text |
...power rf ldmos fet 240 w, 28 v, 1805 C 1880 mhz description the pxac182908fv is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq... |
Description |
Thermally-Enhanced High Power RF LDMOS FET
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File Size |
347.25K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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Part No. |
PXAC182002FC PXAC182002FC-15
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OCR Text |
...power rf ldmos fet 180 w, 28 v, 1805 C 1880 mhz description the pxac182002fc is a 180-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz freq... |
Description |
Thermally-Enhanced High Power RF LDMOS FET
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File Size |
350.19K /
7 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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Part No. |
PXAC180602MD-15
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OCR Text |
... power rf ldmos fet 60 w, 28 v, 1805 C 1880 mhz description the pxac180602md is a 60-watt ldmos fet with an asym - metrical design intended for use in multi-standard cellular power amplifer applications in the 1805 to... |
Description |
Thermally-Enhanced High Power RF LDMOS FET
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File Size |
476.19K /
9 Page |
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it Online |
Download Datasheet |
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Motorola, Inc MOTOROLA[Motorola Inc]
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Part No. |
MRF18090A MRF18090AS
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OCR Text |
...VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (V... |
Description |
MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs 1.80 - 1.88 GHz 90 W 26 V LATERAL N-CHANNEL RF POWER MOSFETS 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
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File Size |
171.46K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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