...) = 190m at VGS = -10V, ID = -2.8a Max rDS(on) = 224m at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant Inverter H-Bridge
General Description
These dual N and p-channel enhancement mode Power MOSFETs are produced using Fairchild...
...V
G S
RDS(on) = 7.0 ID = -1.8a
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniq...P a k T O -2 52 A A I-P a k TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @...
Description
-400V Single p-channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8a) 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 7.0ohm,身份证\u003d- 1.8a
...s =--10v, v gs =--10v, i d =--1.8a 5.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1.8a 1 nc gate-to-drain miller charge q...p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =1.5a r l =10 w v dd =15v v out v in 10v 0v v in p...