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  8a p-channel Datasheet PDF File

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    SSM4502GM

List of Unclassifed Manufacturers
ETC
Silicon Standard Corp.
Part No. SSM4502GM
OCR Text ...S=0V VDS=16V ,VGS=0V VGS=12V ID=8a VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total G...P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter ...
Description N AND p-channel ENHANCEMENT MODE POWER MOSFET

File Size 300.72K  /  13 Page

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    FDD3510H

Fairchild Semiconductor
Part No. FDD3510H
OCR Text ...) = 190m at VGS = -10V, ID = -2.8a Max rDS(on) = 224m at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant Inverter H-Bridge General Description These dual N and p-channel enhancement mode Power MOSFETs are produced using Fairchild...
Description Dual N & p-channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM p-channel: -80V, -9.4A, 190mOHM

File Size 424.11K  /  10 Page

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    IRFRU9310 IRFU9310 IRFR9310

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFRU9310 IRFU9310 IRFR9310
OCR Text ...V G S RDS(on) = 7.0 ID = -1.8a Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniq...P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @...
Description -400V Single p-channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8a) 功率MOSFET(减振钢板基本\u003d-00V,的Rds(on)\u003d 7.0ohm,身份证\u003d- 1.8a

File Size 110.22K  /  10 Page

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    CPH6615

Sanyo Semicon Device
Part No. CPH6615
OCR Text ...s =--10v, v gs =--10v, i d =--1.8a 5.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1.8a 1 nc gate-to-drain miller charge q...p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =1.5a r l =10 w v dd =15v v out v in 10v 0v v in p...
Description General Purpose Switching Device Application

File Size 75.88K  /  6 Page

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    BUZ900 BUZ901

Magnatec
ETC
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. BUZ900 BUZ901
OCR Text ...e @ Tcase = 25C BUZ900 160V 14V 8a 8a 125W -55 to 150C 150C 1C/W BUZ901 200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (0...P CH = P CH 12 5W 4 3 2 1 0 0 10 20 4V 12 5W 3V 3V 2V 2V 30 4...
Description N-channel power MOSFET for audio applications, 200V
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))

File Size 39.07K  /  4 Page

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