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  p.8 Datasheet PDF File

For p.8 Found Datasheets File :: 274925    Search Time::3.391ms    
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    2SD468

Hitachi Semiconductor
Part No. 2SD468
OCR Text ...tor to Emitter Voltage VCE (V) P C Typical Output Characteristics 800 = 0.8 0. 9 W 0.4 Typical Transfer Characteristics 1,000 VCE = 2 V Collector Current IC (mA) 300 Ta = 75C 100 30 10 3 1 0 0.2 0.4 0.6 0.8 1.0 ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 29.49K  /  6 Page

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    2SD662 2SD662B

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD662 2SD662B
OCR Text ...h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 4.10.2 High collector to emitter voltage VCEO. High tran...8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V...
Description Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 38.37K  /  2 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ...istics 35 30 25 20 15 10 5 0.4 P 0.8 0.8 0.6 2 =0 .9 W 0.4 C 0.2 1 0.5mA IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characterist...
Description Silicon NPN Epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ...8 0.6 TC = 25C 200 100 P C = 20 2.0 Ta = 75C W 50 20 10 5 2 1.5 0.4 1.0 0.2 0.5 mA IB = 0 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 0 10 20 30 40 50 Collector to emitter volta...
Description Silicon NPN Epitaxial

File Size 35.10K  /  7 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ...ype Package Marking symbol : P(2SD814) L(2SD814A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitte...8 0.16 -0.06 +0.1 1 Transistor PC -- Ta 240 120 Ta=25C 200 100 100 2SD814, 2SD814A ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ...N OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-024,A UTC 2SD882S Fig.1 Static...8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA -IB=2mA -IB=1mA 50 4 n tio 0.4 ...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 73.22K  /  2 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ... C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 N-channel...8 IF [A] 9 VDS [V] Starting Tch [C] VSD [V] Allowable Power Dissipation ...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    4N33 4N29 4N30 4N32 4N31

Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. 4N33 4N29 4N30 4N32 4N31
OCR Text ...veforms, refer to Figure 11. p 2 Motorola Optoelectronics Device Data 4N29 4N29A 4N30 4N31 4N32 4N33 TYPICAL CHARACTERISTICS 2 VF, FORWARD VOLTAGE (VOLTS) 1.8 PULSE ONLY PULSE OR DC I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) ...
Description STANDARD THRU HOLE CASE 730A-04

File Size 286.89K  /  6 Page

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    5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ A

AD[Analog Devices]
Analog Devices, Inc.
Part No. 5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ AD536ASCHIPS AD536ASD AD536ASE AD536ASH 5962-89805 AD536 AD883B AD536AKH_ AD536AKH/
OCR Text ...cations. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com F...8 1 0.1 0.1 +12.5 25 20 2 2 0 to +11 0 to +2 0.6 13.33 0 to 7 20 0 to 2 7 16.67 0.5 0.5 0.1...
Description Complete Monolithic IC Which Performs True RMS-to-DC Conversion
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
JT 28C 26#20 2#16 SKT PLUG
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, CDIP14
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, MBCY10

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    71061 SI4831DY

http://
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.045 @ VGS = -10 V 0.090 @ VGS = -4...8 A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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For p.8 Found Datasheets File :: 274925    Search Time::3.391ms    
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