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				International Rectifier
Part No.	IRFB9N65 IRFB9N65A
OCR Text	... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 8.5 5.4 21 167 1.3 30 2.8 -55 to + 1...
Description	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) 650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	107.63K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SP3900
OCR Text	...5 30 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4.5a 74 @ vgs=4.5v 42 @ vgs=10v features super high dense cell design for low r ds(on) . r...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	108.83K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB9N60 IRFB9N60APBF
OCR Text	... Linear Derating Factor Gate-to-source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mou...
Description	Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	142.12K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D
OCR Text	... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 23 17 92 3.8 136 0.9 30 4.1 -55 to +...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A) 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	148.91K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB11N50 IRFB11N50APBF
OCR Text	... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 30 6.9 -55 to + 15...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	105.49K / 8 Page	View it Online	Download Datasheet

				FreesCale
Part No.	MC4805
OCR Text	...sed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-so...
Description	Dual P-Channel 30-V (D-S) MOSFET
File Size	335.01K / 5 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BTS117
OCR Text	...possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 m 1000 mJ Application * All kinds of resistive, in...
Description	10 A BUF OR INV BASED PRPHL DRVR, PSFM3 Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) From old datasheet system
File Size	137.31K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...2-3-11 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads in switching or l...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	...Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol V...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

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