Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD814...1.5 -0.05
0.650.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector t...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...e temperature Note: 1. Value at T C = 25C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
2SB857 -70 -50 -5 -4 -8 40 150 -45 to +150
2SB858 -70 -60 -5 -4 -8 40 150 -45 to +150
Unit V V V A A W C C
2SB857, 2SB858
Electrical C...
...TC
10
(-60 V, -0.4 A)
n (T C = 25 ) C
1.8 W
0
Ta
150 100 50 Ambient temperature Ta (C) Case temperature TC (C)
2
2SB861
Typical Output Characteristics -1.0 TC = 25C Collector Current IC (A) -0.8 Typical Transfer Char...
Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification For DC-DC converter For stroboscope
Unit: mm...1 150 -55 ~ +150 Unit V V V A A W C C
0.45-0.1 1.27 1.27
13.50.5
0.7-0.2
Low collector to ...
Description
Silicon PNP epitaxial planer type(For low-frequency power amplification)
...103 Non repetitive pulse TC=25C t=0.5ms 1ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
-3
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
300ms
1
- 0.1
...
Description
Silicon PNP epitaxial planar type(For power amplification)
...on (ASO)
-10 ICP -3 IC 10ms -1 t=1ms 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
3...
Description
Silicon PNP epitaxial planar type(For power amplification)
...lse TC=25C ICP IC 10ms -1 300ms t=1ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 -3
- 0.3 - 0.1 - 0.03 - 0.01 -1
...
Description
Silicon PNP epitaxial planar type(For power amplification)